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RC28F256K18C120 PDF预览

RC28F256K18C120

更新时间： 2024-01-11 17:00:07
品牌 Logo 应用领域
英特尔 - INTEL 内存集成电路闪存
页数 文件大小 规格书
80页 1053K
描述
Flash, 16MX16, 120ns, PBGA64, 1 MM PITCH, BGA-64

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RC28F256K18C120 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：BGA包装说明：TBGA, BGA64,8X8,40
针数：64Reach Compliance Code：unknown
ECCN代码：3A991.B.1.AHTS代码：8542.32.00.51
风险等级：5.84最长访问时间：120 ns
其他特性：SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE命令用户界面：YES
通用闪存接口：YES数据轮询：NO
JESD-30 代码：R-PBGA-B64JESD-609代码：e0
长度：15 mm内存密度：268435456 bit
内存集成电路类型：FLASH内存宽度：16
功能数量：1部门数/规模：256
端子数量：64字数：16777216 words
字数代码：16000000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：16MX16封装主体材料：PLASTIC/EPOXY
封装代码：TBGA封装等效代码：BGA64,8X8,40
封装形状：RECTANGULAR封装形式：GRID ARRAY, THIN PROFILE
页面大小：8 words并行/串行：PARALLEL
峰值回流温度（摄氏度）：NOT SPECIFIED电源：1.8/3.3,3/3.3 V
编程电压：3 V认证状态：Not Qualified
座面最大高度：1.2 mm部门规模：1M
最大待机电流：0.000055 A子类别：Flash Memories
最大压摆率：0.07 mA最大供电电压 (Vsup)：3.3 V
最小供电电压 (Vsup)：2.7 V标称供电电压 (Vsup)：3 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：Tin/Lead (Sn/Pb)
端子形式：BALL端子节距：1 mm
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
切换位：NO类型：NOR TYPE
宽度：10 mmBase Number Matches：1

RC28F256K18C120 数据手册

 浏览型号RC28F256K18C120的Datasheet PDF文件第2页浏览型号RC28F256K18C120的Datasheet PDF文件第3页浏览型号RC28F256K18C120的Datasheet PDF文件第4页浏览型号RC28F256K18C120的Datasheet PDF文件第5页浏览型号RC28F256K18C120的Datasheet PDF文件第6页浏览型号RC28F256K18C120的Datasheet PDF文件第7页 
Intel StrataFlash® Synchronous Memory  
(K3/K18)  
28F640K3, 28F640K18, 28F128K3, 28F128K18, 28F256K3,  
28F256K18 (x16)  
Datasheet  
Product Features  
■ Performance  
■ Architecture  
—110/115/120 ns Initial Access Speed for  
64/128/256 Mbit Densities  
—25 ns Asynchronous Page-Mode Reads,  
8 Words Wide  
—13 ns Synchronous Burst-Mode Reads,  
8 or 16 Words Wide  
—32-Word Write Buffer  
—Multi-Level Cell Technology: High  
Density at Low Cost  
—Symmetrical 64 K-Word Blocks  
—256 Mbit (256 Blocks)  
—128 Mbit (128 Blocks)  
—64 Mbit (64 Blocks)  
—Ideal for “CODE + DATA” applications  
—Buffered Enhanced Factory  
■ Security  
Programming  
—2-Kbit Protection Register  
—Unique 64-bit Device Identifier  
—Absolute Data Protection with VPEN and  
WP#  
—Individual and Instantaneous Block  
Locking, Unlocking and Lock-Down  
Capability  
■ Software  
—25 µs (typ.) Program and Erase Suspend  
Latency Time  
—Flash Data Integrator (FDI), Common  
Flash Interface (CFI) Compatible  
—Programmable WAIT Signal Polarity  
■ Quality and Reliability  
—Operating Temperature:  
■ Packaging and Voltage  
—64-Ball Intel® Easy BGA Package  
(128-Mbit is also offered in a lead-free  
package)  
–40 °C to +85 °C  
—100K Minimum Erase Cycles per Block  
—0.18 µm ETOX™ VII Process  
—56-and 79-Ball Intel® VF BGA Package  
—VCC = 2.70 V to 3.60 V  
—VCCQ = 1.65 to 1.95 V/2.375 to 3.60 V  
The Intel StrataFlash® Synchronous Memory (K3/K18) product line adds a high performance  
burst-mode interface and other additional features to the Intel StrataFlash® memory family of  
products. Just like its J3 counterpart, the K3/K18 device utilizes reliable and proven two-bit-per-  
cell technology to deliver 2x the memory in 1x the space, offering high density flash at low cost.  
This is Intel’s third generation MLC technology, manufactured on 0.18 µm lithography, making  
it the most widely used and proven MLC product family on the market.  
K3/K18 is a 3-volt device (core), but it is available with 3-volt (K3) or 1.8-volt (K18) I/O  
voltages. These devices are ideal for mainstream applications requiring large storage space for  
both code and data storage. Advanced system designs will benefit from the high performance  
page and burst modes for direct execution from the flash memory. Available in densities from 64  
Mbit to 256 Mbit (32 Mbyte), the K3/K18 device is the highest density NOR-based flash  
component available today, just as it was when Intel introduced the original device in 1997.  
Notice: This document contains information on new products in production. The specifications  
are subject to change without notice. Verify with your local Intel sales office that you have the lat-  
est datasheet before finalizing a design.  
Order Number: 290737-009  
February 2005  
1234567...80

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RC28F256M29EWHA NUMONYX

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RC28F256M29EWHB MICRON

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RC28F256M29EWLA MICRON

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RC28F256P30B MICRON

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 		Micron Parallel NOR Flash Embedded Memory (P30-65nm)
RC28F256P30B85 INTEL

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 		Intel StrataFlash Embedded Memory
RC28F256P30B85 NUMONYX

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 		Numonyx StrataFlash Embedded Memory
RC28F256P30B85A MICRON

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 		64Mb, 128Mb, 256Mb, 512Mb, Multilevel Cell, Parallel NOR Flash Memory
RC28F256P30B85B MICRON

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 		64Mb, 128Mb, 256Mb, 512Mb, Multilevel Cell, Parallel NOR Flash Memory

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