Datasheet > RC28F256P30B

RC28F256P30B

更新时间： 2024-02-26 20:07:47

品牌	Logo	应用领域
镁光 - MICRON		/
页数	文件大小	规格书
98页	1366K
描述
Micron Parallel NOR Flash Embedded Memory (P30-65nm)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

RC28F256P30B 数据手册

256Mb and 512Mb (256Mb/256Mb), P30-65nm

Features

Micron Parallel NOR Flash Embedded

Memory (P30-65nm)

JS28F256P30B/TFx, RC28F256P30B/TFx, PC28F256P30B/TFx,

RD48F4400P0VBQEx, RC48F4400P0VB0Ex,

PC48F4400P0VB0Ex, PF48F4000P0ZB/TQEx

• Security

Features

• High performance

– One-time programmable register: 64 OTP bits,

programmed with unique information from Mi-

cron; 2112 OTP bits available for customer pro-

gramming

– 100ns initial access for Easy BGA

– 110ns initial access for TSOP

– 25ns 16-word asychronous page read mode

– 52 MHz (Easy BGA) with zero WAIT states and

17ns clock-to-data output synchronous burst

read mode

– Absolute write protection: V_PP= V_SS

– Power-transition erase/program lockout

– Individual zero-latency block locking

– Individual block lock-down

– Password access

• Software

– 4-, 8-, 16-, and continuous word options for burst

mode

– Buffered enhanced factory programming (BEFP)

at 2 MB/s (TYP) using a 512-word buffer

– 1.8V buffered programming at 1.14 MB/s (TYP)

using a 512-word buffer

– 25μs (TYP) program suspend

– 25μs (TYP) erase suspend

– Flash Data Integrator optimized

– Basic command set and extended function Inter-

face (EFI) command set compatible

– Common flash interface

• Architecture

– MLC: highest density at lowest cost

– Asymmetrically blocked architecture

– Four 32KB parameter blocks: top or bottom con-

figuration

– 128KB main blocks

– Blank check to verify an erased block

• Voltage and power

• Density and Packaging

– 56-lead TSOP package (256Mb only)

– 64-ball Easy BGA package (256Mb, 512Mb)

– QUAD+ and SCSP packages (256Mb, 512Mb)

– 16-bit wide data bus

• Quality and reliabilty

– V_CC(core) voltage: 1.7V to 2.0V

– V_CCQ(I/O) voltage: 1.7V to 3.6V

– Standy current: 65µA (TYP) for 256Mb

– 52 MHz continuous synchronous read current:

21mA (TYP), 24mA (MAX)

– JESD47 compliant

– Operating temperature: –40°C to +85°C

– Minimum 100,000 ERASE cycles per block

– 65nm process technology

PDF: 09005aef84566799

p30_65nm_MLC_256Mb-512mb.pdf - Rev. C 12/13 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

12 3 4 5 6 7...98

中文翻译

下载PDF

与RC28F256P30B相关器件

型号	品牌	获取价格	描述	数据表
RC28F256P30B85	INTEL	获取价格	Intel StrataFlash Embedded Memory
RC28F256P30B85	NUMONYX	获取价格	Numonyx StrataFlash Embedded Memory
RC28F256P30B85A	MICRON	获取价格	64Mb, 128Mb, 256Mb, 512Mb, Multilevel Cell, Parallel NOR Flash Memory
RC28F256P30B85B	MICRON	获取价格	64Mb, 128Mb, 256Mb, 512Mb, Multilevel Cell, Parallel NOR Flash Memory
RC28F256P30B85D	MICRON	获取价格	64Mb, 128Mb, 256Mb, 512Mb, Multilevel Cell, Parallel NOR Flash Memory
RC28F256P30BFA	MICRON	获取价格	Micron Parallel NOR Flash Embedded Memory (P30-65nm)
RC28F256P30BFE	MICRON	获取价格	256Mb and 512Mb (256Mb/256Mb), P30-65nm
RC28F256P30T85	NUMONYX	获取价格	Numonyx StrataFlash Embedded Memory
RC28F256P30T85	INTEL	获取价格	Intel StrataFlash Embedded Memory
RC28F256P30T85A	NUMONYX	获取价格	Flash, 16MX16, 88ns, PBGA64, BGA-64

与RC28F256P30B相关文章

MAX232IDR数据手册：产品特性、电气参数、替代型号推荐
2024-07-02

1
2N7002DW数据手册：参数解读、引脚信息、替代型号推荐
2024-07-02

1
网络滤波器、EMI滤波器与EMC滤波器在电子元器件中的分类关系
2024-07-02

2
NTC热敏电阻与PTC热敏电阻的应用原理及选型原则
2024-07-02

2

产品中心

服务支持

精选活动

关于我们

帮助中心

RC28F256P30B

RC28F256P30B 数据手册

与RC28F256P30B相关器件

与RC28F256P30B相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

RC28F256P30B

RC28F256P30B 数据手册

与RC28F256P30B相关器件

与RC28F256P30B相关文章

您还可以找

您在本页遇到什么问题？