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RC28F256P30TFE PDF预览

RC28F256P30TFE

更新时间: 2024-02-28 12:08:00
品牌 Logo 应用领域
镁光 - MICRON /
页数 文件大小 规格书
95页 1351K
描述
256Mb and 512Mb (256Mb/256Mb), P30-65nm

RC28F256P30TFE 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:BGA
包装说明:BGA-64针数:64
Reach Compliance Code:unknownECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:5.72
最长访问时间:100 ns启动块:TOP
命令用户界面:YES通用闪存接口:YES
数据轮询:NOJESD-30 代码:R-PBGA-B64
JESD-609代码:e0长度:13 mm
内存密度:268435456 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
部门数/规模:4,255端子数量:64
字数:16777216 words字数代码:16000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:16MX16
封装主体材料:PLASTIC/EPOXY封装代码:TBGA
封装等效代码:BGA64,8X8,40封装形状:RECTANGULAR
封装形式:GRID ARRAY, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):235电源:1.8,1.8/3.3 V
编程电压:1.8 V认证状态:Not Qualified
座面最大高度:1.2 mm部门规模:16K,64K
最大待机电流:0.00021 A子类别:Flash Memories
最大压摆率:0.031 mA最大供电电压 (Vsup):2 V
最小供电电压 (Vsup):1.7 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:TIN LEAD SILVER
端子形式:BALL端子节距:1 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:30
切换位:NO类型:NOR TYPE
宽度:10 mmBase Number Matches:1

RC28F256P30TFE 数据手册

 浏览型号RC28F256P30TFE的Datasheet PDF文件第2页浏览型号RC28F256P30TFE的Datasheet PDF文件第3页浏览型号RC28F256P30TFE的Datasheet PDF文件第4页浏览型号RC28F256P30TFE的Datasheet PDF文件第5页浏览型号RC28F256P30TFE的Datasheet PDF文件第6页浏览型号RC28F256P30TFE的Datasheet PDF文件第7页 
256Mb and 512Mb (256Mb/256Mb), P30-65nm  
Features  
Micron Parallel NOR Flash Embedded  
Memory (P30-65nm)  
JS28F256P30B/TFx, RC28F256P30B/TFx, PC28F256P30B/TFx,  
RD48F4400P0VBQEx, RC48F4400P0VB0Ex,  
PC48F4400P0VB0Ex, PF48F4000P0ZB/TQEx  
• Security  
Features  
• High performance  
– One-Time Programmable Register: 64 OTP bits,  
programmed with unique information from Mi-  
cron; 2112 OTP bits available for customer pro-  
gramming  
– 100ns initial access for Easy BGA  
– 110ns initial access for TSOP  
– 25ns 16-word asychronous page read mode  
– 52 MHz (Easy BGA) with zero WAIT states and  
17ns clock-to-data output synchronous burst  
read mode  
– Absolute write protection: VPP = VSS  
– Power-transition erase/program lockout  
– Individual zero-latency block locking  
– Individual block lock-down  
– Password access  
• Software  
– 4-, 8-, 16-, and continuous word options for burst  
mode  
– Buffered enhanced factory programming (BEFP)  
at 2MB/s (TYP) using a 512 word buffer  
– 1.8V buffered programming at 1.14MB/s (TYP)  
using a 512 word buffer  
25μs (TYP) program suspend  
25μs (TYP) erase suspend  
– Flash Data Integrator optimized  
– Basic command set and extended function Inter-  
face (EFI) command set compatible  
– Common flash interface  
• Architecture  
– MLC: highest density at lowest cost  
– Asymmetrically blocked architecture  
– Four 32-KB parameter blocks: top or bottom con-  
figuration  
– 128KB main blocks  
– Blank check to verify an erased block  
• Voltage and power  
• Density and Packaging  
– 56-lead TSOP package (256Mb only)  
– 64-ball Easy BGA package (256Mb, 512Mb)  
– QUAD+ and SCSP packages (256Mb, 512Mb)  
– 16-bit wide data bus  
• Quality and Reliabilty  
– VCC (core) voltage: 1.7V to 2.0V  
– VCCQ (I/O) voltage: 1.7V to 3.6V  
– Standy current: 65µA (TYP) for 256Mb  
– 52 MHz continuous synchronous read current:  
21mA (TYP), 24mA (MAX)  
– JESD47E compliant  
– Operating temperature: –40 °C to +85 °C  
– Minimum 100,000 erase cycles per block  
– 65nm process technology  
PDF: 09005aef84566799  
p30_65nm_256Mb-512mb.pdf - Rev. A 1/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
1
© 2013 Micron Technology, Inc. All rights reserved.  
Products and specifications discussed herein are subject to change by Micron without notice.  

RC28F256P30TFE 替代型号

型号 品牌 替代类型 描述 数据表
RC28F256P30TFA MICRON

完全替代

1.7V to 2.0V VCC (core) voltage, 1.7V to 3.6V VCCQ (I/O) voltage
PC28F256P30TFA MICRON

完全替代

Micron Parallel NOR Flash Embedded Memory (P30-65nm)
PC28F256P30TFE MICRON

完全替代

256Mb and 512Mb (256Mb/256Mb), P30-65nm

与RC28F256P30TFE相关器件

型号 品牌 获取价格 描述 数据表
RC28F256P30TFF MICRON

获取价格

256Mb and 512Mb (256Mb/256Mb), P30-65nm
RC28F256P33B85 NUMONYX

获取价格

Flash, 16MX16, 85ns, PBGA64, BGA-64
RC28F256P33B85A MICRON

获取价格

64Mb, 128Mb, 256Mb, 512Mb, Multilevel Cell, Parallel NOR Flash Memory
RC28F256P33B85B MICRON

获取价格

64Mb, 128Mb, 256Mb, 512Mb, Multilevel Cell, Parallel NOR Flash Memory
RC28F256P33BFA MICRON

获取价格

2.3V to 3.6V VCC (core) voltage, 2.3V to 3.6V VCCQ (I/O) voltage
RC28F256P33BFB MICRON

获取价格

2.3V to 3.6V VCC (core) voltage, 2.3V to 3.6V VCCQ (I/O) voltage
RC28F256P33BFE MICRON

获取价格

2.3V to 3.6V VCC (core) voltage, 2.3V to 3.6V VCCQ (I/O) voltage
RC28F256P33BFF MICRON

获取价格

2.3V to 3.6V VCC (core) voltage, 2.3V to 3.6V VCCQ (I/O) voltage
RC28F256P33T85 INTEL

获取价格

Flash, 16MX16, 85ns, PBGA64, BGA-64
RC28F256P33T85A NUMONYX

获取价格

Flash, 16MX16, 85ns, PBGA64, BGA-64