Datasheet > RB521G-30G

RB521G-30G

更新时间： 2023-12-06 20:10:08

品牌	Logo	应用领域
先科 - SWST		肖特基二极管
页数	文件大小	规格书
3页	101K
描述
肖特基二极管

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中文翻译

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数据手册

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RB521G-30G 数据手册

RB521G-30G

Silicon Epitaxial Planar Schottky Barrier Diode

for rectifying small power application

PINNING

DESCRIPTION

Cathode

Anode

Top View

Marking Code: "B"

Simplified outline SOD-723 and symbol

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

Value

Unit

Reverse Voltage

V_R

I_F(AV)

I_FSM

T_j

Average Forward Rectified Current

Peak Forward Surge Current (60 Hz for 1 cyc.)

Junction Temperature

100

125

℃

Storage Temperature Range

T_stg

- 40 to + 125

Characteristics at T_a= 25℃

Parameter

Symbol

V_F

Max.

0.35

Unit

Forward Voltage

at I_F= 10 mA

Reverse Current

at V_R= 10 V

I_R

µA

1 / 3

Dated: 05/08/2021 Rev:04

12 3

中文翻译

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