Datasheet > RB521S-30

RB521S-30

更新时间： 2024-09-25 06:07:11

品牌	Logo	应用领域
商升特 - SEMTECH		二极管光电二极管局域网
页数	文件大小	规格书
3页	187K
描述
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE

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中文翻译

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RB521S-30 数据手册

RB521S-30

SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE

for low current rectification and high speed

switching applications

PINNING

Features

DESCRIPTION

Cathode

• Extremely small surface mounting type

Anode

Top View

Marking Code: "C"

Simplified outline SOD-523 and symbol

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

Value

Unit

Reverse Voltage

V_R

I_O

Mean Rectifying Current

200

Peak Forward Surge Current (60Hz for Cyc.)

Junction Temperature

I_FSM

T_j

125

Storage Temperature Range

T_s

- 40 to + 125

Characteristics at T_a= 25 C

Parameter

Symbol

V_F

Max.

0.5

Unit

Forward Voltage

at I_F= 200 mA

Reverse Current

at V_R= 10 V

I_R

µA

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 23/11/2006

12 3

中文翻译

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