Datasheet > RB521G-30_05

RB521G-30_05

更新时间： 2024-01-17 01:42:18

品牌	Logo	应用领域
罗姆 - ROHM		肖特基二极管
页数	文件大小	规格书
4页	193K
描述
Schottky barrier diode

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

RB521G-30_05 数据手册

RB521G-30

Diodes

Schottky barrier diode

RB521G-30

zApplication

zExternal dimensions (Unit : mm)

zLand size figure (Unit : mm)

Rectifying small power

0.5

0.13±0.03

0.6±0.05

zFeatures

1) Ultra small mold type. (VMD2)

2) Low V

3) High reliability

VMD2

zConstruction

0.27±0.03

0.5±0.05

Silicon epitaxial planer

zStructure

ROHM : VMD2

dot (year week factory)

zTaping specification (Unit : mm)

0.18±0.05

φ1.5+0.1

ꢀꢀꢀꢀꢀ0

2±0.05

4±0.1

φ0.5

0.3

0.65±0.05

4±0.1

2±0.05

0.76±0.1

zAbsolute maximum ratings (Ta=25°C)

Parameter

Limits

Symbol

V_R

Unit

Reverse voltage (DC)

Average rectified forward current

Forward current surge peak （60Hz・1cyc）

Junction temperature

100

500

125

I_FSM

℃

Storage temperature

-40 to +125

Tstg

℃

zElectrical characteristics (Ta=25°C)

Parameter

Forward voltage

Reverse current

Conditions

Symbol

Min.

Typ.

Max.

Unit

V_F

I_R

0.35

I_F=10mA

V_R=10V

µA

Rev.A

1/3

12 3 4

中文翻译

下载PDF

与RB521G-30_05相关器件

型号	品牌	获取价格	描述	数据表
RB521G-30FH	ROHM	获取价格	Rectifier Diode, Schottky, 1 Element, 0.1A, 30V V(RRM), Silicon, VMD2, 2 PIN
RB521G-30G	SEMTECH	获取价格	Silicon Epitaxial Planar Schottky Barrier Diode
RB521G-30G	SWST	获取价格	肖特基二极管
RB521G30-G	COMCHIP	获取价格	SMD Schottky Barrier Diode
RB521G-30HF	COMCHIP	获取价格	DIODE SCHOTTKY 30V 100MA SOD723
RB521G-30T2R	ROHM	获取价格	Schottky barrier diode RB521G-30
RB521G-30-TP	MCC	获取价格	Rectifier Diode, Schottky, 1 Element, 0.1A, 30V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC P
RB521G-30-TP-HF	MCC	获取价格	Rectifier Diode, Schottky, 1 Element, 0.1A, 30V V(RRM), Silicon, HALOGEN FREE AND ROHS COM
RB521G-40	ROHM	获取价格	Rectifier Diode, Schottky, 1 Element, 0.1A, 40V V(RRM), Silicon, VMD2, 2 PIN
RB521G-40FH	ROHM	获取价格	Rectifier Diode, Schottky, 1 Element, 0.1A, 40V V(RRM), Silicon,