Datasheet > RB161M-20_1

RB161M-20_1

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
罗姆 - ROHM		肖特基二极管
页数	文件大小	规格书
4页	146K
描述
Schottky barrier diode

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中文翻译

获取价格

数据手册

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RB161M-20_1 数据手册

RB161M-20

Diodes

Schottky barrier diode

RB161M-20

zApplications

zExternal dimensions (Unit : mm)

zLand size figure

General rectification

0.1±0.1

ꢀꢀꢀ 0.05

1.6±0.1

1.2

zFeatures

1) Power mold type. (CPD3)

2) Low V

3) High reliability

PMDU

zConstruction

Silicon epitaxial planar

zStructure

0.9±0.1

0.8±0.1

ROHM : PMDU

JEDEC :SOD-123

Manufacture Date

zTaping dimensions (Unit : mm)

0.25±0.05

φ1.55±0.05

2.0±0.05

4.0±0.1

φ1.0±0.1

1.81±0.1

1.5MAX

zAbsolute maximum ratings (Ta=25°C)

Parameter

Limits

Symbol

Unit

Reverse voltage (repetitive peak)

Reverse voltage (DC)

V_RM

V_R

Average rectified forward current

Forward current surge peak

Junction temperature

I_FSM

125

℃

Storage temperature

-40 to +125

Tstg

(*1)Mounted on epoxy board. 180°Half sine wave

zElectrical characteristic (Ta=25°C)

Parameter

Forward voltage

Reverse current

Conditions

I_F=0.5A

Symbol

V_F1

Min.

Typ.

0.28

0.31

280

Max.

0.32

0.35

700

Unit

V_F2

I_F=1.0A

V_R=20V

I_R

µA

Rev.B

1/3

12 3 4

中文翻译

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