Datasheet > RB161L-40_2

RB161L-40_2

更新时间： 2022-11-17 01:10:04

品牌	Logo	应用领域
罗姆 - ROHM		肖特基二极管
页数	文件大小	规格书
4页	154K
描述
Schottky barrier diode

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中文翻译

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数据手册

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RB161L-40_2 数据手册

RB161L-40

Diodes

Schottky barrier diode

RB161L-40

zApplications

z Dimensions (Unit : mm)

z Land size figure (Unit : mm)

General rectification

2.0

2.6±0.2

zFeatures

1) Small power mold type. (PMDS)

2) Low V_F.

0.1±0.02

ꢀꢀꢀ 0.1

3) High reliability.

①

②

PMDS

2.0±0.2

1.5±0.2

zStructure

zConstruction

Silicon epitaxial planar

ROHM : PMDS

JEDEC : SOD-106

Manufacture Date

①

②

z Taping specifications (Unit : mm)

2.0±0.05

4.0±0.1

0.3

φ1.55±0.05

φ1.55

2.9±0.1

4.0±0.1

2.8MAX

zAbsolute maximum ratings (Ta=25°C)

Parameter

Limits

Symbol

V_RM

V_R

Unit

Reverse voltage (repetitive peak)

Reverse voltage (DC)

Average rectified forward current

Forward current surge peak （60Hz・1cyc）

Junction temperautre

125

I_FSM

℃

Storage tempereature

-40 to +125

Tstg

(*1)Mounted on epoxy board. 180°Half sine wave

zElectrical characteristics (Ta=25°C)

Parameter

Conditions

Symbol

Min.

Typ.

Max.

0.40

Unit

V_F

I_R

I_F=1.0A

V_R=20V

Forward voltage

Reverse current

Rev.H

1/3

12 3 4

中文翻译

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