RB088RSM10STF
Schottky Barrier Diode
(AEC-Q101 qualified)
Data sheet
●Outline
V
100
10
V
A
A
R
I
o
I
220
FSM
●Features
High reliability
●Inner Circuit
Power mold type
Ultra low I
R
●Application
Switching power supply
Freewheel diode
●Packaging Specifications
Packing
Embossed Tape
Reverse polarity protection
Reel Size(mm)
Taping Width(mm)
Quantity(pcs)
330
12
4000
●Structure
Silicon epitaxial planar
Taping Code
TL1
Marking
RB088RSM10S
(T =25ºC unless otherwise specified)
●Absolute Maximum Ratings
c
Parameter
Symbol
Conditions
Limits
Unit
V
V
Repetitive peak reverse voltage
Duty≦0.5
100
RM
V
Reverse voltage
Reverse direct voltage
100
V
A
R
60Hzhalf sin waveform,resistive load,
I
o
Average rectified forward current
Peak forward surge current
Junction temperature(1)
Storage temperature
10
T =153℃Max.
c
60Hzhalf sin waveform,non-repetitive,
I
220
A
FSM
T =25℃
a
T
-
-
175
℃
j
T
stg
-55 ~ 175
℃
Note(1) To avoid occurrence of thermal runaway, actual board is to be designed to fulfill dP /dT<1/R .
th(j-a)
d
j
Attention
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2022/12/16_Rev.003