Datasheet > RB088T-40NZ

RB088T-40NZ

更新时间： 2023-09-03 20:40:10

品牌	Logo	应用领域
罗姆 - ROHM		开关二极管
页数	文件大小	规格书
6页	1208K
描述
RB088T-40NZ是面向开关电源的超低IR肖特基势垒二极管。

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中文翻译

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数据手册

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RB088T-40NZ 数据手册

Schottky Barrier Diode

Datasheet

Structure

RB088T-40NZ

Application

Dimensions (Unit : mm)

Switching power supply

Features

1) Cathode common dual type

(1)

Anode

(2)

(3)

2) High reliability

Cathode Anode

Super low I_R

Construction

ROHM : TO220FN

Silicon epitaxial planar type

: Manufacture date

Package Dimensions (Unit : mm)

540

Absolute Maximum Ratings (T_c= 25°C)

Parameter

Symbol

Conditions

Limits

Unit

V_RM

V_R

I_o

Duty≦0.5

Repetitive peak reverse voltage

Reverse voltage

Direct reverse voltage

60Hz half sin wave, resistive load,

I_O/2 per diode, T_c=130ºC Max.

60Hz half sin wave, Non-repetitive at

T_a=25ºC , 1cycle, per diode

Average forward rectified current

Non-repetitive forward current surge peak I_FSM

T_j

150

Operating junction temperature

Storage temperature

°C

T_stg

55 to 150 °C

Electrical and Thermal Characteristics (T_j= 25°C)

Parameter

Forward voltage

Conditions

I_F=5A

Symbol

V_F

Min. Typ. Max. Unit

0.77

V_R=40V

I_R

Reverse current

A

R_th(j-c)

Junction to case

Thermal resistance

°C/W

www.rohm.com

2017.07 - Rev.B

1/3

12 3 4 5 6

中文翻译

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