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RB090MS-30 PDF预览

RB090MS-30

更新时间: 2024-11-12 11:58:31
品牌 Logo 应用领域
罗姆 - ROHM 肖特基二极管
页数 文件大小 规格书
5页 522K
描述
Schottky Barrier Diode

RB090MS-30 数据手册

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RB090MS-30  
Data Sheet  
Schottky Barrier Diode  
RB090MS-30  
lApplications  
lExternal Dimensions(Unit : mm)  
lLand size figure(Unit : mm)  
General rectification  
lFeatures  
1)Small power mold type.  
(MPD6)  
2)Low VF  
RB090MS  
30  
3)High reliability  
MPD6  
lConstruction  
Silicon epitaxial  
lStructure  
ROHM : MPD6  
Manufacture Date  
1pin mark  
lTaping specifications(Unit : mm)  
lAbsolute Maximum Ratings(Ta=25°C)  
Parameter  
Reverse voltage (repetitive)  
Reverse voltage (DC)  
Limits  
Symbol  
VRM  
Unit  
V
30  
VR  
30  
V
Average rectified forward current  
Forward current surge peak 60Hz1cyc)  
Junction temperature  
6
30  
Io  
IFSM  
Tj  
A
A
150  
°C  
°C  
Storage temperature  
Tstg  
-55 to +150  
(*1)Mounting on epoxi board. 180°Half sine wave  
lElectrical Characteristics(Ta=25°C)  
Parameter  
Forward voltage  
Symbol  
Min.  
-
Typ.  
-
Max.  
0.55  
200  
Unit  
V
Conditions  
VF  
IR  
IF=6.0A  
VR=30V  
Reverse current  
-
-
mA  
www.rohm.com  
© 2012 ROHM Co., Ltd. All rights reserved.  
1/4  
2012.08 - Rev.A  

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