RB088LAM-30TF
Schottky Barrier Diode
(AEC-Q101 qualified)
Data sheet
●Outline
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V
30
5
V
A
A
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R
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ꢀ
I
o
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ꢀ
I
80
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FSM
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●Features
●Inner Circuit
High reliability
Small power mold type
Super low I
R
●Application
●Packaging Specifications
Packing
General rectification
Embossed Tape
Reel Size(mm)
Taping Width(mm)
Quantity(pcs)
180
12
3000
TR
●Structure
Silicon epitaxial planar
Taping Code
Marking
G0
(T =25ºC unless otherwise specified)
●Absolute Maximum Ratings
c
Parameter
Repetitive peak reverse voltage
Reverse voltage
Symbol
Conditions
Duty≦0.5
Limits
30
30
Unit
V
V
V
RM
V
Reverse direct voltage
R
Glass epoxy mounted、
I
60Hzhalf sin waveform、resistive load、
Average rectified forward current
Peak forward surge current
5
A
A
o
T =108℃ Max.
c
60Hzhalf sin waveform、Non-repetitive、
I
80
FSM
one cycle、T =25℃
a
T
T
stg
Junction temperature
Storage temperature
-
-
175
-55 ~ 175
℃
j
℃
(T =25ºC unless otherwise specified)
●Characteristics
j
Parameter
Forward voltage
Symbol
Conditions
Min. Typ. Max. Unit
V
I =5A
F
-
-
0.69
V
F
I
R
Reverse current
V =30V
R
-
-
2.5
μA
Attention
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2022/01/18_Rev.003