Datasheet > RA30H3340M_06

RA30H3340M_06

更新时间： 2024-11-21 03:38:15

品牌	Logo	应用领域
三菱 - MITSUBISHI		放大器
页数	文件大小	规格书
7页	227K
描述
RoHS Compliance , 330-400MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO

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RA30H3340M_06 数据手册

MITSUBISHI RF MOSFET MODULE

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

RA30H3340M

RoHS Compliance , 330-400MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO

BLOCK DIAGRAM

DESCRIPTION

The RA30H3340M is a 30-watt RF MOSFET Amplifier

Module for 12.5-volt mobile radios that operate in the 330- to

400-MHz range.

The battery can be connected directly to the drain of the

enhancement-mode MOSFET transistors. Without the gate

voltage (V_GG=0V), only a small leakage current flows into the

drain and the RF input signal attenuates up to 60 dB. The output

power and drain current increase as the gate voltage increases.

With a gate voltage around 4V (minimum), output power and

drain current increases substantially. The nominal output power

becomes available at 4.5V (typical) and 5V (maximum). At

V_GG=5V, the typical gate current is 1 mA.

This module is designed for non-linear FM modulation, but may

also be used for linear modulation by setting the drain quiescent

current with the gate voltage and controlling the output power

with the input power.

RF Input (P_in)

Gate Voltage (V_GG), Power Control

Drain Voltage (V_DD), Battery

RF Output (P_out

)

FEATURES

RF Ground (Case)

• Enhancement-Mode MOSFET Transistors

(I_DD≅0 @ V_DD=12.5V, V_GG=0V)

PACKAGE CODE: H2S

• P_out>30W, η_T>40% @ V_DD=12.5V, V_GG=5V, P_in=50mW

• Broadband Frequency Range: 330-400MHz

• Low-Power Control Current I_GG=1mA (typ) at V_GG=5V

• 66 x 21 x 9.8 mm

• Linear operation is possible by setting the quiescent drain

current with the gate voltage and controlling the output power

with the input power

RoHS COMPLIANCE

• RA30H3340M-101 is a RoHS compliant products.

• RoHS compliance is indicate by the letter “G” after the Lot Marking.

• This product include the lead in the Glass of electronic parts and the

lead in electronic Ceramic parts.

How ever ,it applicable to the following exceptions of RoHS Directions.

1.Lead in the Glass of a cathode-ray tube, electronic parts, and

fluorescent tubes.

2.Lead in electronic Ceramic parts.

ORDERING INFORMATION:

ORDER NUMBER

RA30H3340M-101

SUPPLY FORM

Antistatic tray,

10 modules/tray

RA30H3340M

1 Aug 2006

MITSUBISHI ELECTRIC

1/7

12 3 4 5 6 7

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与RA30H3340M_06相关器件

型号	品牌	获取价格	描述	数据表
RA30H3340M_10	MITSUBISHI	获取价格	330-400MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO
RA30H3340M_11	MITSUBISHI	获取价格	RoHS Compliance , 330-400MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO
RA30H3340M-01	MITSUBISHI	获取价格	MITSUBISHI RF MOSFET MODULE
RA30H3340M-101	MITSUBISHI	获取价格	RoHS Compliance , 330-400MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO
RA30H3340M-E01	MITSUBISHI	获取价格	MITSUBISHI RF MOSFET MODULE
RA30H4045MR-E01	MITSUBISHI	获取价格	Narrow Band High Power Amplifier, 400MHz Min, 450MHz Max, 66 X 21 MM, 9.88 MM HEIGHT, MODU
RA30H4047M	MITSUBISHI	获取价格	400-470MHz 30W 12.5V MOBILE RADIO
RA30H4047M_06	MITSUBISHI	获取价格	RoHS Compliance , 400-470MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO
RA30H4047M_10	MITSUBISHI	获取价格	400-470MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO
RA30H4047M_11	MITSUBISHI	获取价格	RoHS Compliance , 400-470MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO

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