Datasheet > RA30H4552M1

RA30H4552M1

更新时间： 2024-11-21 03:38:15

品牌	Logo	应用领域
三菱 - MITSUBISHI		放大器射频
页数	文件大小	规格书
9页	153K
描述
RF MOSFET MODULE 30W 12.5V, 2 Stage Amp. For MOBILE RADIO

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RA30H4552M1 数据手册

MITSUBISHI RF MOSFET MODULE

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

RA30H4552M1

RoHS Compliance, 450-520MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO

DESCRIPTION

The RA30H4552M1 is a 30-watt RF MOSFET Amplifier

BLOCK DIAGRAM

Module for 12.5-volt mobile radios that operate in the 450- to

520-MHz range.

The battery can be connected directly to the drain of the

enhancement-mode MOSFET transistors. Without the gate

voltage (V_GG=0V), only a small leakage current flows into the

drain and the nominal output signal (P_out=30W) attenuates up to

60 dB. The output power and the drain current increase as the

gate voltage increases. The output power and the drain current

increase substantially with the gate voltage around 0V(minimum).

The nominal output power becomes available at the state that

V_GGis 4V (typical) and 5V (maximum).

At V_GG=5V, the typical gate currents are 1mA.This module is

designed for non-linear FM modulation, but may also be used for

linear modulation by setting the drain quiescent current with the

gate voltage and controlling the output power with the input

power.

RF Input (P_in)

FEATURES

Gate Voltage (V_GG), Power Control

Drain Voltage (V_DD), Battery

• Enhancement-Mode MOSFET Transistors

(I_DD≅0 @ V_DD=12.5V, V_GG=0V)

RF Output (P_out

)

• P_out>30W, η_T>42% @ V_DD=12.5V, V_GG=5V, P_in=50mW

• Broadband Frequency Range: 450-520MHz

RF Ground (Case)

• Metal shield structure that makes the improvements of spurious

radiation simple

PACKAGE CODE: H2M

• Low-Power Control Current I_GG=1mA (typ) @ V_GG=5V

• Module Size: 67 x 18 x 9.9 mm

• Linear operation is possible by setting the quiescent drain

current with the gate voltages and controlling the output power

with the input power.

RoHS COMPLIANCE

• RA30H4552M1 is a RoHS compliant product.

• RoHS compliance is indicate by the letter “G” after the Lot Marking.

• This product include the lead in the Glass of electronic parts and the

lead in electronic Ceramic parts.

However, it is applicable to the following exceptions of RoHS Directions.

1.Lead in the Glass of a cathode-ray tube, electronic parts, and

fluorescent tubes.

2.Lead in electronic Ceramic parts.

ORDERING INFORMATION:

ORDER NUMBER

RA30H4552M1-101

SUPPLY FORM

Antistatic tray,

10 modules/tray

RA30H4552M1

15^thMar 2007

MITSUBISHI ELECTRIC

1/9

12 3 4 5 6 7...9

中文翻译

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与RA30H4552M1相关器件

型号	品牌	获取价格	描述	数据表
RA30H4552M1_08	MITSUBISHI	获取价格	RF MOSFET MODULE 450-520MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO
RA30H4552M1_10	MITSUBISHI	获取价格	450-520MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO
RA30H4552M1_11	MITSUBISHI	获取价格	RoHS Compliance, 450-520MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO
RA30H4552M1-101	MITSUBISHI	获取价格	RF MOSFET MODULE 30W 12.5V, 2 Stage Amp. For MOBILE RADIO
RA30LASB502A	HONEYWELL	获取价格	Potentiometer, Wire Wound, 4W, 5000ohm, 10% +/-Tol, 1 Turn(s)
RA30NASD101A	HONEYWELL	获取价格	Potentiometer, Wire Wound, 4W, 100ohm, 10% +/-Tol, 1 Turn(s)
RA30NASD103A	HONEYWELL	获取价格	Potentiometer, Wire Wound, 4W, 10000ohm, 10% +/-Tol, 1 Turn(s)
RA30NASD202A	HONEYWELL	获取价格	Potentiometer, Wire Wound, 4W, 2000ohm, 10% +/-Tol, 1 Turn(s)
RA30NASD253A	HONEYWELL	获取价格	Potentiometer, Wire Wound, 4W, 25000ohm, 10% +/-Tol, 1 Turn(s)
RA30NASD501A	HONEYWELL	获取价格	Potentiometer, Wire Wound, 4W, 500ohm, 10% +/-Tol, 1 Turn(s)

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