Datasheet > RA30H3340M-01

RA30H3340M-01

更新时间： 2024-11-20 21:55:47

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
9页	75K
描述
MITSUBISHI RF MOSFET MODULE

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中文翻译

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技术参数
数据手册

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RA30H3340M-01 技术参数

生命周期：	Obsolete	包装说明：	FLNG,2.4"H.SPACE
Reach Compliance Code：	unknown	风险等级：	5.84
特性阻抗：	50 Ω	构造：	COMPONENT
最大输入功率 (CW)：	20 dBm	功能数量：	1
最大工作频率：	400 MHz	最小工作频率：	330 MHz
最高工作温度：	110 °C	最低工作温度：	-30 °C
封装主体材料：	PLASTIC/EPOXY	封装等效代码：	FLNG,2.4"H.SPACE
电源：	5,12.5 V	射频/微波设备类型：	NARROW BAND HIGH POWER
子类别：	RF/Microwave Amplifiers	技术：	HYBRID
最大电压驻波比：	3	Base Number Matches：	1

RA30H3340M-01 数据手册

MITSUBISHI RF MOSFET MODULE

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

RA30H3340M

330-400MHz 30W 12.5V MOBILE RADIO

DESCRIPTION

BLOCK DIAGRAM

The RA30H3340M is a 30-watt RF MOSFET Amplifier

Module for 12.5-volt mobile radios that operate in the 330- to

400-MHz range.

The battery can be connected directly to the drain of the

enhancement-mode MOSFET transistors. Without the gate

voltage (V_GG=0V), only a small leakage current flows into the

drain and the RF input signal attenuates up to 60 dB. The output

power and drain current increase as the gate voltage increases.

With a gate voltage around 4V (minimum), output power and

drain current increases substantially. The nominal output power

becomes available at 4.5V (typical) and 5V (maximum). At

V_GG=5V, the typical gate current is 1 mA.

This module is designed for non-linear FM modulation, but may

also be used for linear modulation by setting the drain quiescent

current with the gate voltage and controlling the output power with

the input power.

RF Input (P_in)

Gate Voltage (V_GG), Power Control

Drain Voltage (V_DD), Battery

RF Output (P_out

)

FEATURES

RF Ground (Case)

• Enhancement-Mode MOSFET Transistors

(I_DD@0 @ V_DD=12.5V, V_GG=0V)

• P_out>30W, h_T>40% @ V_DD=12.5V, V_GG=5V, P_in=50mW

• Broadband Frequency Range: 330-400MHz

• Low-Power Control Current I_GG=1mA (typ) at V_GG=5V

• 66 x 21 x 9.8 mm

• Linear operation is possible by setting the quiescent drain

current with the gate voltage and controlling the output power

with the input power

ORDERING INFORMATION:

ORDER NUMBER

RA30H3340M-E01

SUPPLY FORM

Antistatic tray,

10 modules/tray

RA30H3340M-01

(Japan - packed without desiccator)

RA30H3340M

2 Dec 2002

MITSUBISHI ELECTRIC

1/9

12 3 4 5 6 7...9

中文翻译

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与RA30H3340M-01相关器件

型号	品牌	获取价格	描述	数据表
RA30H3340M-101	MITSUBISHI	获取价格	RoHS Compliance , 330-400MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO
RA30H3340M-E01	MITSUBISHI	获取价格	MITSUBISHI RF MOSFET MODULE
RA30H4045MR-E01	MITSUBISHI	获取价格	Narrow Band High Power Amplifier, 400MHz Min, 450MHz Max, 66 X 21 MM, 9.88 MM HEIGHT, MODU
RA30H4047M	MITSUBISHI	获取价格	400-470MHz 30W 12.5V MOBILE RADIO
RA30H4047M_06	MITSUBISHI	获取价格	RoHS Compliance , 400-470MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO
RA30H4047M_10	MITSUBISHI	获取价格	400-470MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO
RA30H4047M_11	MITSUBISHI	获取价格	RoHS Compliance , 400-470MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO
RA30H4047M-01	MITSUBISHI	获取价格	400-470MHz 30W 12.5V MOBILE RADIO
RA30H4047M1	MITSUBISHI	获取价格	RF MOSFET MODULE 400-470MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO
RA30H4047M1_08	MITSUBISHI	获取价格	400-470MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO

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