Datasheet > RA30H4452M1A-101

RA30H4452M1A-101

更新时间： 2024-11-25 19:54:23

品牌	Logo	应用领域
三菱 - MITSUBISHI		高功率电源射频微波
页数	文件大小	规格书
12页	740K
描述
Narrow Band High Power Amplifier,

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技术参数
数据手册

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RA30H4452M1A-101 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.84	射频/微波设备类型：	NARROW BAND HIGH POWER
Base Number Matches：	1

RA30H4452M1A-101 数据手册

< Silicon RF Power Modules >

RA30H4452M1A

RoHS Compliance, 440-520MHz 30W 12.5V, 2 Stage Amp. for Digital Mobile Radio

DESCRIPTION

The RA30H4452M1A is a 30-watt RF MOSFET Amplifier

Module for 12.5-volt digital mobile radios of TDMA that operate

in the 440- to 520-MHz range.

BLOCK DIAGRAM

VGG2

The battery can be connected directly to the drain of the

enhancement-mode MOSFET transistors. The output power and

drain current increase as the gate voltage increases.

At V_GG2=5V, the typical gate currents are 1.6mA.

This module is designed for TDMA, therefore this module

separated the gate terminal of each MOSFET to make Ton/Toff

time rapid.

Pin&VGG1

FEATURES

• Enhancement-Mode MOSFET Transistors

(I_DD0 @ V_DD=12.5V, V_GG1=0V, V_GG2=0V)

RF Input (P_in) & Gate Voltage (V_GG1

Power Control

)

• P_out>30W, _T>40% @ V_DD=12.5V, V_GG1=3.4V,V_GG2=5V, P_in=50mW

• Broadband Frequency Range: 440-520MHz

• High speed Output rise/fall time.

Gate Voltage (V_GG2), Power Control

Drain Voltage (V_DD), Battery

T_on<60μsec _,T_off<20μsec @ f=440-520MHz, V_DD=12.5V,P_in=50mW,

V_GG2=5.0V, Zg=Zl=50Ω,P_out=10W(V_GG1:adj. or V_GG2:adj.)

RF Output (P_out

)

RF Ground (Case)

• Metal shield structure that makes the improvements of spurious

radiation simple

PACKAGE CODE: H2M

• Low-Power Control Current I_GG1+ I_GG2=2mA (typ) @ V_GG1=3.4V,

V _GG2=5V

• Module Size: 67 x 19.4 x 9.9 mm

• Linear operation is possible by setting the quiescent drain

current with the gate voltages and controlling the output power

with the input power.

RoHS COMPLIANCE

• RA30H4452M1A is a RoHS compliant product.

• RoHS compliance is indicate by the letter “G” after the Lot Marking.

• This product include the lead in the Glass of electronic parts and the lead in

electronic Ceramic parts.

However, it is applicable to the following exceptions of RoHS Directions.

1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent

tubes.

2.Lead in electronic Ceramic parts.

ORDERING INFORMATION:

ORDER NUMBER

SUPPLY FORM

Antistatic tray,

10 modules/tray

RA30H4452M1A-101

Publication Date :Mar.2015

12 3 4 5 6 7...12

中文翻译

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与RA30H4452M1A-101相关器件

型号	品牌	获取价格	描述	数据表
RA30H4452M-E01	MITSUBISHI	获取价格	440-520MHz 30W 12.5V MOBILE RADIO
RA30H4552M1	MITSUBISHI	获取价格	RF MOSFET MODULE 30W 12.5V, 2 Stage Amp. For MOBILE RADIO
RA30H4552M1_08	MITSUBISHI	获取价格	RF MOSFET MODULE 450-520MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO
RA30H4552M1_10	MITSUBISHI	获取价格	450-520MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO
RA30H4552M1_11	MITSUBISHI	获取价格	RoHS Compliance, 450-520MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO
RA30H4552M1-101	MITSUBISHI	获取价格	RF MOSFET MODULE 30W 12.5V, 2 Stage Amp. For MOBILE RADIO
RA30LASB502A	HONEYWELL	获取价格	Potentiometer, Wire Wound, 4W, 5000ohm, 10% +/-Tol, 1 Turn(s)
RA30NASD101A	HONEYWELL	获取价格	Potentiometer, Wire Wound, 4W, 100ohm, 10% +/-Tol, 1 Turn(s)
RA30NASD103A	HONEYWELL	获取价格	Potentiometer, Wire Wound, 4W, 10000ohm, 10% +/-Tol, 1 Turn(s)
RA30NASD202A	HONEYWELL	获取价格	Potentiometer, Wire Wound, 4W, 2000ohm, 10% +/-Tol, 1 Turn(s)

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