Datasheet > RA30H3340M_11

RA30H3340M_11

更新时间： 2024-11-21 11:59:07

品牌	Logo	应用领域
三菱 - MITSUBISHI		放大器
页数	文件大小	规格书
8页	205K
描述
RoHS Compliance , 330-400MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO

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RA30H3340M_11 数据手册

RA30H3340M

RoHS Compliance , 330-400MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO

BLOCK DIAGRAM

DESCRIPTION

The RA30H3340M is a 30-watt RF MOSFET Amplifier Module for

12.5-volt mobile radios that operate in the 330- to 400-MHz range.

The battery can be connected directly to the drain of the

enhancement-mode MOSFET transistors. Without the gate voltage

(V_GG=0V), only a small leakage current flows into the drain and the RF

input signal attenuates up to 60 dB. The output power and drain current

increase as the gate voltage increases. With a gate voltage around

4.0V (minimum), output power and drain current increases substantially.

The nominal output power becomes available at 4.5V (typical) and 5V

(maximum). At V_GG=5V, the typical gate current is 1 mA.

This module is designed for non-linear FM modulation, but may also be

used for linear modulation by setting the drain quiescent current with

the gate voltage and controlling the output power with the input power.

RF Input (P_in)

Gate Voltage (V_GG), Power Control

Drain Voltage (V_DD), Battery

FEATURES

• Enhancement-Mode MOSFET Transistors

(I_DD0 @ V_DD=12.5V, V_GG=0V)

RF Output (P_out

)

RF Ground (Case)

• P_out>30W, _T>40% @ V_DD=12.5V, V_GG=5V, P_in=50mW

• Broadband Frequency Range: 330-400MHz

• Low-Power Control Current I_GG=1mA (typ) at V_GG=5V

• 66 x 21 x 9.8 mm

PACKAGE CODE: H2S

• Linear operation is possible by setting the quiescent drain current with

the gate voltage and controlling the output power with the input power

RoHS COMPLIANCE

• RA30H3340M-101 is a RoHS compliant products.

• RoHS compliance is indicate by the letter “G” after the Lot Marking.

• This product include the lead in the Glass of electronic parts and the lead in

electronic Ceramic parts.

However, it is applicable to the following exceptions of RoHS Directions.

1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent

tubes.

2.Lead in electronic Ceramic parts.

ORDERING INFORMATION:

ORDER NUMBER

RA30H3340M-101

SUPPLY FORM

Antistatic tray,

10 modules/tray

Publication Date : Jul.2011

12 3 4 5 6 7 8

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与RA30H3340M_11相关器件

型号	品牌	获取价格	描述	数据表
RA30H3340M-01	MITSUBISHI	获取价格	MITSUBISHI RF MOSFET MODULE
RA30H3340M-101	MITSUBISHI	获取价格	RoHS Compliance , 330-400MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO
RA30H3340M-E01	MITSUBISHI	获取价格	MITSUBISHI RF MOSFET MODULE
RA30H4045MR-E01	MITSUBISHI	获取价格	Narrow Band High Power Amplifier, 400MHz Min, 450MHz Max, 66 X 21 MM, 9.88 MM HEIGHT, MODU
RA30H4047M	MITSUBISHI	获取价格	400-470MHz 30W 12.5V MOBILE RADIO
RA30H4047M_06	MITSUBISHI	获取价格	RoHS Compliance , 400-470MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO
RA30H4047M_10	MITSUBISHI	获取价格	400-470MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO
RA30H4047M_11	MITSUBISHI	获取价格	RoHS Compliance , 400-470MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO
RA30H4047M-01	MITSUBISHI	获取价格	400-470MHz 30W 12.5V MOBILE RADIO
RA30H4047M1	MITSUBISHI	获取价格	RF MOSFET MODULE 400-470MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO

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