5秒后页面跳转
RA20H8994M_11 PDF预览

RA20H8994M_11

更新时间: 2024-11-05 12:23:11
品牌 Logo 应用领域
三菱 - MITSUBISHI 放大器
页数 文件大小 规格书
9页 190K
描述
RoHS Compliance , 896-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO

RA20H8994M_11 数据手册

 浏览型号RA20H8994M_11的Datasheet PDF文件第2页浏览型号RA20H8994M_11的Datasheet PDF文件第3页浏览型号RA20H8994M_11的Datasheet PDF文件第4页浏览型号RA20H8994M_11的Datasheet PDF文件第5页浏览型号RA20H8994M_11的Datasheet PDF文件第6页浏览型号RA20H8994M_11的Datasheet PDF文件第7页 
<Silicon RF Power Modules >  
RA20H8994M  
RoHS Compliance , 896-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO  
BLOCK DIAGRAM  
DESCRIPTION  
The RA20H8994M is a 20-watt RF MOSFET Amplifier Module for  
12.5-volt mobile radios that operate in the 896- to 941-MHz range.  
The battery can be connected directly to the drain of the  
2
3
enhancement-mode MOSFET transistors. Without the gate voltage  
(VGG=0V), only a small leakage current flows into the drain and the RF  
input signal attenuates up to 60 dB. The output power and drain current  
increase as the gate voltage increases. With a gate voltage around  
4V (minimum), output power and drain current increases substantially.  
The nominal output power becomes available at 4.5V (typical) and 5V  
(maximum). At VGG=5V, the typical gate current is 1 mA.  
1
4
5
This module is designed for non-linear FM modulation, but may also be  
used for linear modulation by setting the drain quiescent current with  
the gate voltage and controlling the output power with the input power.  
1
2
3
4
5
RF Input (Pin)  
Gate Voltage (VGG), Power Control  
Drain Voltage (VDD), Battery  
FEATURES  
RF Output (Pout  
)
• Enhancement-Mode MOSFET Transistors  
(IDD0 @ VDD=12.5V, VGG=0V)  
RF Ground (Case)  
• Pout>20W, T>25% @ VDD=12.5V, VGG=5V, Pin=50mW  
• Broadband Frequency Range: 896-941MHz  
• Low-Power Control Current IGG=1mA (typ) at VGG=5V  
• Module Size: 66 x 21 x 9.88 mm  
PACKAGE CODE: H2S  
• Linear operation is possible by setting the quiescent drain current with  
the gate voltage and controlling the output power with the input power  
RoHS COMPLIANCE  
• RA20H8994M-101 is a RoHS compliant products.  
• RoHS compliance is indicate by the letter “G” after the Lot Marking.  
• This product include the lead in the Glass of electronic parts and the lead in  
electronic Ceramic parts.  
However, it is applicable to the following exceptions of RoHS Directions.  
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent  
tubes.  
2.Lead in electronic Ceramic parts.  
ORDERING INFORMATION:  
ORDER NUMBER  
RA20H8994M-101  
SUPPLY FORM  
Antistatic tray,  
10 modules/tray  
Publication Date : Jul.2011  
1

与RA20H8994M_11相关器件

型号 品牌 获取价格 描述 数据表
RA20H8994M-01 MITSUBISHI

获取价格

896-902/ 935-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO
RA20H8994M-101 MITSUBISHI

获取价格

896-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO
RA20H8994M-E01 MITSUBISHI

获取价格

896-902/ 935-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO
RA20LASB103A HONEYWELL

获取价格

Potentiometer, Wire Wound, 2W, 10000ohm, 10% +/-Tol, 1 Turn(s)
RA20LASB501A HONEYWELL

获取价格

Potentiometer, Wire Wound, 2W, 500ohm, 10% +/-Tol, 1 Turn(s)
RA20LASB502A HONEYWELL

获取价格

Potentiometer, Wire Wound, 2W, 5000ohm, 10% +/-Tol, 1 Turn(s)
RA20NASD102A HONEYWELL

获取价格

Potentiometer, Wire Wound, 2W, 1000ohm, 10% +/-Tol, 1 Turn(s)
RA20NASD103A HONEYWELL

获取价格

Potentiometer, Wire Wound, 2W, 10000ohm, 10% +/-Tol, 1 Turn(s)
RA20NASD252A HONEYWELL

获取价格

Potentiometer, Wire Wound, 2W, 2500ohm, 10% +/-Tol, 1 Turn(s)
RA20NASD502A HONEYWELL

获取价格

Potentiometer, Wire Wound, 2W, 5000ohm, 10% +/-Tol, 1 Turn(s)