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RA20H8994M-E01 PDF预览

RA20H8994M-E01

更新时间: 2024-11-04 22:24:27
品牌 Logo 应用领域
三菱 - MITSUBISHI 放大器
页数 文件大小 规格书
8页 70K
描述
896-902/ 935-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO

RA20H8994M-E01 数据手册

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MITSUBISHI RF MOSFET MODULE  
RA20H8994M  
896-902/ 935-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO  
DESCRIPTION  
BLOCK DIAGRAM  
The RA20H8994M is a 20-watt RF MOSFET Amplifier Module  
for 12.5-volt mobile radios that operate in the 896- to 941-MHz  
range.  
2
3
The battery can be connected directly to the drain of the  
enhancement-mode MOSFET transistors. Without the gate  
voltage (VGG=0V), only a small leakage current flows into the drain  
and the RF input signal attenuates up to 60 dB. The output power  
and drain current increase as the gate voltage increases. With a  
gate voltage around 4V (minimum), output power and drain current  
increases substantially. The nominal output power becomes  
available at 4.5V (typical) and 5V (maximum). At VGG=5V, the  
typical gate current is 1 mA.  
This module is designed for non-linear FM modulation, but may  
also be used for linear modulation by setting the drain quiescent  
current with the gate voltage and controlling the output power with  
the input power.  
1
4
5
1
RF Input (Pin)  
2
3
4
5
Gate Voltage (VGG), Power Control  
Drain Voltage (VDD), Battery  
RF Output (Pout)  
FEATURES  
RF Ground (Case)  
• Enhancement-Mode MOSFET Transistors  
(IDD@0 @ VDD=12.5V, VGG=0V)  
PACKAGE CODE: H2S  
• Pout>20W, hT>25% @ VDD=12.5V, VGG=5V, Pin=50mW  
• Broadband Frequency Range: 896-902/ 935-941MHz  
• Low-Power Control Current IGG=1mA (typ) at VGG=5V  
• Module Size: 66 x 21 x 9.88 mm  
• Linear operation is possible by setting the quiescent drain current  
with the gate voltage and controlling the output power with the  
input power  
ORDERING INFORMATION:  
ORDER NUMBER  
RA20H8994M-E01  
SUPPLY FORM  
Antistatic tray,  
10 modules/tray  
RA20H8994M-01  
(Japan - packed without desiccator)  
RA 20H8994M  
25 April 2003  
MITSUBISHI ELECTRIC  
1/9  

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