Datasheet > RA20H8994M-101

RA20H8994M-101

更新时间： 2024-11-05 09:39:15

品牌	Logo	应用领域
三菱 - MITSUBISHI		放大器
页数	文件大小	规格书
9页	93K
描述
896-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO

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技术参数
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RA20H8994M-101 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	包装说明：	FLNG,2.4"H.SPACE
Reach Compliance Code：	unknown	风险等级：	5.82
特性阻抗：	50 Ω	构造：	MODULE
最大输入功率 (CW)：	20 dBm	功能数量：	1
最大工作频率：	941 MHz	最小工作频率：	896 MHz
最高工作温度：	110 °C	最低工作温度：	-30 °C
封装主体材料：	PLASTIC/EPOXY	封装等效代码：	FLNG,2.4"H.SPACE
电源：	5,12.5 V	射频/微波设备类型：	NARROW BAND HIGH POWER
子类别：	RF/Microwave Amplifiers	技术：	HYBRID
最大电压驻波比：	3	Base Number Matches：	1

RA20H8994M-101 数据手册

Silicon RF Power Semiconductors

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

RA20H8994M

RoHS Compliance , 896-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO

BLOCK DIAGRAM

DESCRIPTION

The RA20H8994M is a 20-watt RF MOSFET Amplifier

Module for 12.5-volt mobile radios that operate in the 896- to

941-MHz range.

The battery can be connected directly to the drain of the

enhancement-mode MOSFET transistors. Without the gate

voltage (V_GG=0V), only a small leakage current flows into the

drain and the RF input signal attenuates up to 60 dB. The output

power and drain current increase as the gate voltage increases.

With a gate voltage around 4V (minimum), output power and

drain current increases substantially. The nominal output power

becomes available at 4.5V (typical) and 5V (maximum). At

V_GG=5V, the typical gate current is 1 mA.

This module is designed for non-linear FM modulation, but may

also be used for linear modulation by setting the drain quiescent

current with the gate voltage and controlling the output power

with the input power.

RF Input (P_in)

Gate Voltage (V_GG), Power Control

Drain Voltage (V_DD), Battery

RF Output (P_out

)

FEATURES

RF Ground (Case)

• Enhancement-Mode MOSFET Transistors

(I_DD≅0 @ V_DD=12.5V, V_GG=0V)

PACKAGE CODE: H2S

• P_out>20W, η_T>25% @ V_DD=12.5V, V_GG=5V, P_in=50mW

• Broadband Frequency Range: 896-941MHz

• Low-Power Control Current I_GG=1mA (typ) at V_GG=5V

• Module Size: 66 x 21 x 9.88 mm

• Linear operation is possible by setting the quiescent drain

current with the gate voltage and controlling the output power

with the input power

RoHS COMPLIANCE

• RA20H8994M-101 is a RoHS compliant products.

• RoHS compliance is indicate by the letter “G” after the Lot Marking.

• This product include the lead in the Glass of electronic parts and the

lead in electronic Ceramic parts.

How ever ,it applicable to the following exceptions of RoHS Directions.

1.Lead in the Glass of a cathode-ray tube, electronic parts, and

fluorescent tubes.

2.Lead in electronic Ceramic parts.

ORDERING INFORMATION:

ORDER NUMBER

RA20H8994M-101

SUPPLY FORM

Antistatic tray,

10 modules/tray

RA20H8994M

24 Jun 2010

1/9

12 3 4 5 6 7...9

中文翻译

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与RA20H8994M-101相关器件

型号	品牌	获取价格	描述	数据表
RA20H8994M-E01	MITSUBISHI	获取价格	896-902/ 935-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO
RA20LASB103A	HONEYWELL	获取价格	Potentiometer, Wire Wound, 2W, 10000ohm, 10% +/-Tol, 1 Turn(s)
RA20LASB501A	HONEYWELL	获取价格	Potentiometer, Wire Wound, 2W, 500ohm, 10% +/-Tol, 1 Turn(s)
RA20LASB502A	HONEYWELL	获取价格	Potentiometer, Wire Wound, 2W, 5000ohm, 10% +/-Tol, 1 Turn(s)
RA20NASD102A	HONEYWELL	获取价格	Potentiometer, Wire Wound, 2W, 1000ohm, 10% +/-Tol, 1 Turn(s)
RA20NASD103A	HONEYWELL	获取价格	Potentiometer, Wire Wound, 2W, 10000ohm, 10% +/-Tol, 1 Turn(s)
RA20NASD252A	HONEYWELL	获取价格	Potentiometer, Wire Wound, 2W, 2500ohm, 10% +/-Tol, 1 Turn(s)
RA20NASD502A	HONEYWELL	获取价格	Potentiometer, Wire Wound, 2W, 5000ohm, 10% +/-Tol, 1 Turn(s)
RA20X10FB203A503200F	TOCOS	获取价格	20mm Diameter, Single-Turn,Wirewound Industrial Panel Controls
RA20X10FB203A503200G	TOCOS	获取价格	20mm Diameter, Single-Turn,Wirewound Industrial Panel Controls

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