Datasheet > 射频和微波 > 射频/微波放大器> RA20H8994M-01

RA20H8994M-01

更新时间： 2024-11-04 22:16:23

品牌	Logo	应用领域
三菱 - MITSUBISHI		射频和微波射频放大器微波放大器高功率电源
页数	文件大小	规格书
8页	70K
描述
896-902/ 935-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO

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中文翻译

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技术参数
数据手册

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RA20H8994M-01 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.84	Is Samacsys：	N
其他特性：	IT CAN ALSO OPERATE AT 935 TO 941 MHZ	特性阻抗：	50 Ω
构造：	COMPONENT	最大输入功率 (CW)：	20 dBm
最大工作频率：	902 MHz	最小工作频率：	896 MHz
最高工作温度：	110 °C	最低工作温度：	-30 °C
射频/微波设备类型：	NARROW BAND HIGH POWER	最大电压驻波比：	3
Base Number Matches：	1

RA20H8994M-01 数据手册

MITSUBISHI RF MOSFET MODULE

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

RA20H8994M

896-902/ 935-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO

DESCRIPTION

BLOCK DIAGRAM

The RA20H8994M is a 20-watt RF MOSFET Amplifier Module

for 12.5-volt mobile radios that operate in the 896- to 941-MHz

range.

The battery can be connected directly to the drain of the

enhancement-mode MOSFET transistors. Without the gate

voltage (V_GG=0V), only a small leakage current flows into the drain

and the RF input signal attenuates up to 60 dB. The output power

and drain current increase as the gate voltage increases. With a

gate voltage around 4V (minimum), output power and drain current

increases substantially. The nominal output power becomes

available at 4.5V (typical) and 5V (maximum). At V_GG=5V, the

typical gate current is 1 mA.

This module is designed for non-linear FM modulation, but may

also be used for linear modulation by setting the drain quiescent

current with the gate voltage and controlling the output power with

the input power.

RF Input (P_in)

Gate Voltage (V_GG), Power Control

Drain Voltage (V_DD), Battery

RF Output (P_out)

FEATURES

RF Ground (Case)

• Enhancement-Mode MOSFET Transistors

(I_DD@0 @ V_DD=12.5V, V_GG=0V)

PACKAGE CODE: H2S

• P_out>20W, h_T>25% @ V_DD=12.5V, V_GG=5V, P_in=50mW

• Broadband Frequency Range: 896-902/ 935-941MHz

• Low-Power Control Current I_GG=1mA (typ) at V_GG=5V

• Module Size: 66 x 21 x 9.88 mm

• Linear operation is possible by setting the quiescent drain current

with the gate voltage and controlling the output power with the

input power

ORDERING INFORMATION:

ORDER NUMBER

RA20H8994M-E01

SUPPLY FORM

Antistatic tray,

10 modules/tray

RA20H8994M-01

(Japan - packed without desiccator)

RA 20H8994M

25 April 2003

MITSUBISHI ELECTRIC

1/9

12 3 4 5 6 7 8

中文翻译

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与RA20H8994M-01相关器件

型号	品牌	获取价格	描述	数据表
RA20H8994M-101	MITSUBISHI	获取价格	896-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO
RA20H8994M-E01	MITSUBISHI	获取价格	896-902/ 935-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO
RA20LASB103A	HONEYWELL	获取价格	Potentiometer, Wire Wound, 2W, 10000ohm, 10% +/-Tol, 1 Turn(s)
RA20LASB501A	HONEYWELL	获取价格	Potentiometer, Wire Wound, 2W, 500ohm, 10% +/-Tol, 1 Turn(s)
RA20LASB502A	HONEYWELL	获取价格	Potentiometer, Wire Wound, 2W, 5000ohm, 10% +/-Tol, 1 Turn(s)
RA20NASD102A	HONEYWELL	获取价格	Potentiometer, Wire Wound, 2W, 1000ohm, 10% +/-Tol, 1 Turn(s)
RA20NASD103A	HONEYWELL	获取价格	Potentiometer, Wire Wound, 2W, 10000ohm, 10% +/-Tol, 1 Turn(s)
RA20NASD252A	HONEYWELL	获取价格	Potentiometer, Wire Wound, 2W, 2500ohm, 10% +/-Tol, 1 Turn(s)
RA20NASD502A	HONEYWELL	获取价格	Potentiometer, Wire Wound, 2W, 5000ohm, 10% +/-Tol, 1 Turn(s)
RA20X10FB203A503200F	TOCOS	获取价格	20mm Diameter, Single-Turn,Wirewound Industrial Panel Controls

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