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RA07N4452M_10 PDF预览

RA07N4452M_10

更新时间: 2024-10-28 12:23:11
品牌 Logo 应用领域
三菱 - MITSUBISHI 放大器便携式无线
页数 文件大小 规格书
9页 148K
描述
RoHS Compliance , 440-520MHz 7.5W 9.6V, 2 Stage Amp. For PORTABLE RADIO

RA07N4452M_10 数据手册

 浏览型号RA07N4452M_10的Datasheet PDF文件第3页浏览型号RA07N4452M_10的Datasheet PDF文件第4页浏览型号RA07N4452M_10的Datasheet PDF文件第5页浏览型号RA07N4452M_10的Datasheet PDF文件第6页浏览型号RA07N4452M_10的Datasheet PDF文件第8页浏览型号RA07N4452M_10的Datasheet PDF文件第9页 
Silicon RF Power Semiconductors  
ELECTROSTATIC SENSITIVE DEVICE  
OBSERVE HANDLING PRECAUTIONS  
RoHS COMPLIANCE RA07N4452M  
RECOMMENDATIONS and APPLICATION INFORMATION:  
Construction:  
This module consists of an alumina substrate soldered onto a copper flange. For mechanical protection, a plastic  
cap is attached with silicone. The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate,  
and coated with resin. Lines on the substrate (eventually inductors), chip capacitors, and resistors form the bias and  
matching circuits. Wire leads soldered onto the alumina substrate provide the DC and RF connection.  
Following conditions must be avoided:  
a) Bending forces on the alumina substrate (for example, by driving screws or from fast thermal changes)  
b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion)  
c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichlorethylene)  
d) Frequent on/off switching that causes thermal expansion of the resin  
e) ESD, surge, overvoltage in combination with load VSWR, and oscillation  
ESD:  
This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required.  
Mounting:  
Heat sink flatness must be less than 50 µm (a heat sink that is not flat or particles between module and heat sink  
may cause the ceramic substrate in the module to crack by bending forces, either immediately when driving screws  
or later when thermal expansion forces are added).  
A thermal compound between module and heat sink is recommended for low thermal contact resistance and to  
reduce the bending stress on the ceramic substrate caused by the temperature difference to the heat sink.  
The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board.  
M2.6 screws are recommended with a tightening torque of 1.8 to 3.0 kgf-cm.  
Soldering and Defluxing:  
This module is designed for manual soldering.  
The lead (terminal) must be soldered after the module is screwed onto the heat sink.  
The temperature of the lead (terminal) soldering should be lower than 350°C and shorter than 3 second.  
Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause bubbles  
in the coating of the transistor chips which can lift off the bond wires).  
Thermal Design of the Heat Sink:  
At Pout=7W, VDD=9.6V and Pin=20mW each stage transistor operating conditions are:  
Pin  
(W)  
Pout  
(W)  
Rth(ch-case)  
(°C/W)  
IDD @ ηT=43%  
VDD  
(V)  
Stage  
(A)  
1st  
2nd  
0.02  
1.5  
4.5  
0.29  
9.6  
1.5  
7.0  
2.4  
1.40  
The channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are:  
Tch1 = Tcase + (9.6V x 0.29A – 1.5W + 0.02W) x 4.5°C/W  
Tch2 = Tcase + (9.6V x 1.40A - 7.0W + 1.5W) x 2.4°C/W  
= T case + 5.9 °C  
= T case + 19.1 °C  
For long-term reliability, it is best to keep the module case temperature (Tcase) below 90°C. For an ambient  
temperature Tair=60°C and P out=7W, the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (Pout / ηT ) - Pout  
+ Pin ) of the heat sink, including the contact resistance, is:  
R
th(case-air) = (90°C - 60°C) / (7W/43% – 7W + 0.02W) = 3.23 °C /W  
When mounting the module with the thermal resistance of 3.23 °C/W, the channel temperature of each sta ge  
transistor is:  
Tch1 = Tair + 35.9 °C  
Tch2 = Tair + 49.1 °C  
The 175°C maximum rating for the channel temperatur e ensures application under derated conditions.  
RA07N4452M  
30 Jun 2010  
7/9  

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