Datasheet > RA07N4452M_10

RA07N4452M_10

更新时间： 2022-04-06 13:52:09

品牌	Logo	应用领域
三菱 - MITSUBISHI		放大器便携式无线
页数	文件大小	规格书
9页	148K
描述
RoHS Compliance , 440-520MHz 7.5W 9.6V, 2 Stage Amp. For PORTABLE RADIO

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RA07N4452M_10 数据手册

Silicon RF Power Semiconductors

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

RoHS COMPLIANCE RA07N4452M

RECOMMENDATIONS and APPLICATION INFORMATION:

Construction:

This module consists of an alumina substrate soldered onto a copper flange. For mechanical protection, a plastic

cap is attached with silicone. The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate,

and coated with resin. Lines on the substrate (eventually inductors), chip capacitors, and resistors form the bias and

matching circuits. Wire leads soldered onto the alumina substrate provide the DC and RF connection.

Following conditions must be avoided:

a) Bending forces on the alumina substrate (for example, by driving screws or from fast thermal changes)

b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion)

c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichlorethylene)

d) Frequent on/off switching that causes thermal expansion of the resin

e) ESD, surge, overvoltage in combination with load VSWR, and oscillation

ESD:

This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required.

Mounting:

Heat sink flatness must be less than 50 µm (a heat sink that is not flat or particles between module and heat sink

may cause the ceramic substrate in the module to crack by bending forces, either immediately when driving screws

or later when thermal expansion forces are added).

A thermal compound between module and heat sink is recommended for low thermal contact resistance and to

reduce the bending stress on the ceramic substrate caused by the temperature difference to the heat sink.

The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board.

M2.6 screws are recommended with a tightening torque of 1.8 to 3.0 kgf-cm.

Soldering and Defluxing:

This module is designed for manual soldering.

The lead (terminal) must be soldered after the module is screwed onto the heat sink.

The temperature of the lead (terminal) soldering should be lower than 350°C and shorter than 3 second.

Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause bubbles

in the coating of the transistor chips which can lift off the bond wires).

Thermal Design of the Heat Sink:

At P_out=7W, V_DD=9.6V and P_in=20mW each stage transistor operating conditions are:

P_in

(W)

P_out

(W)

R_th(ch-case)

(°C/W)

I_DD@ η_T=43%

V_DD

(V)

Stage

(A)

1^st

2^nd

0.02

1.5

4.5

0.29

9.6

1.5

7.0

2.4

1.40

The channel temperatures of each stage transistor T_ch= T_case+ (V_DDx I_DD- P_out+ P_in) x R_th(ch-case)are:

T_ch1= T_case+ (9.6V x 0.29A – 1.5W + 0.02W) x 4.5°C/W

T_ch2= T_case+ (9.6V x 1.40A - 7.0W + 1.5W) x 2.4°C/W

= T _case+ 5.9 °C

= T _case+ 19.1 °C

For long-term reliability, it is best to keep the module case temperature (T_case) below 90°C. For an ambient

temperature T_air=60°C and P _out=7W, the required thermal resistance R_{th (case-air)}= ( T_case- T_air) / ( (P_out/ η_T) - P_out

+ P_in) of the heat sink, including the contact resistance, is:

_th(case-air)= (90°C - 60°C) / (7W/43% – 7W + 0.02W) = 3.23 °C /W

When mounting the module with the thermal resistance of 3.23 °C/W, the channel temperature of each sta ge

transistor is:

T_ch1= T_air+ 35.9 °C

T_ch2= T_air+ 49.1 °C

The 175°C maximum rating for the channel temperatur e ensures application under derated conditions.

RA07N4452M

30 Jun 2010

7/9

1...4 5 678 9

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与RA07N4452M_10相关器件

型号	品牌	获取价格	描述	数据表
RA07N4452M-01	MITSUBISHI	获取价格	440-520MHz 7.5W 9.6V PORTABLE RADIO
RA07N4452M-101	MITSUBISHI	获取价格	RoHS Compliance , 440-520MHz 7.5W 9.6V, 2 Stage Amp. For PORTABLE RADIO
RA07N4452M-E01	MITSUBISHI	获取价格	440-520MHz 7.5W 9.6V PORTABLE RADIO
RA-07-R	DBLECTRO	获取价格	RIGHT ANGLE TYPE DIP SWITCH
RA-07-R-T	DBLECTRO	获取价格	RIGHT ANGLE TYPE DIP SWITCH
RA-08	DBLECTRO	获取价格	RIGHT ANGLE TYPE DIP SWITCH
RA-08-B	DBLECTRO	获取价格	RIGHT ANGLE TYPE DIP SWITCH
RA-08-B-T	DBLECTRO	获取价格	RIGHT ANGLE TYPE DIP SWITCH
RA08H1317	MITSUBISHI	获取价格	135-175MHz 8W 12.5V PORTABLE/MOBILE RADIO
RA08H1317M	MITSUBISHI	获取价格	135-175MHz 8W 12.5V PORTABLE/MOBILE RADIO

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