Datasheet > 射频和微波 > 射频/微波放大器> RA08H1317M-101

RA08H1317M-101

更新时间： 2024-01-31 16:00:51

品牌	Logo	应用领域
三菱 - MITSUBISHI		射频和微波射频放大器微波放大器便携式无线高功率电源
页数	文件大小	规格书
8页	233K
描述
RoHS Compliance , 135-175MHz 8W 12.5V, 2 stage Amp. For PORTABLE RADIO

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RA08H1317M-101 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	包装说明：	FLNG,1.0"H.SPACE
Reach Compliance Code：	unknown	风险等级：	5.69
Is Samacsys：	N	特性阻抗：	50 Ω
构造：	MODULE	最大输入功率 (CW)：	16.02 dBm
功能数量：	1	最大工作频率：	175 MHz
最小工作频率：	135 MHz	最高工作温度：	90 °C
最低工作温度：	-30 °C	封装主体材料：	PLASTIC/EPOXY
封装等效代码：	FLNG,1.0"H.SPACE	电源：	3.5,12.5 V
射频/微波设备类型：	NARROW BAND HIGH POWER	子类别：	RF/Microwave Amplifiers
最大电压驻波比：	4.4	Base Number Matches：	1

RA08H1317M-101 数据手册

MITSUBISHI RF MOSFET MODULE

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

RA08H1317M

RoHS Compliance , 135-175MHz 8W 12.5V, 2 stage Amp. For PORTABLE RADIO

DESCRIPTION

BLOCK DIAGRAM

The RA08H1317M is a 8-watt RF MOSFET Amplifier Module

for 12.5-volt portable radios that operate in the 135- to 175-MHz

range.

The battery can be connected directly to the drain of the

enhancement-mode MOSFET transistors. Without the gate

voltage (V_GG=0V), only a small leakage current flows into the

drain and the RF input signal attenuates up to 60 dB. The output

power and drain current increase as the gate voltage increases.

With a gate voltage around 2.5V (minimum), output power and

drain current increases substantially. The nominal output power

becomes available at 3V (typical) and 3.5V (maximum). At

V_GG=3.5V, the typical gate current is 1 mA.

This module is designed for non-linear FM modulation, but may

also be used for linear modulation by setting the drain quiescent

current with the gate voltage and controlling the output power

with the input power.

RF Input (P_in)

Gate Voltage (V_GG), Power Control

Drain Voltage (V_DD), Battery

FEATURES

RF Output (P_out

)

• Enhancement-Mode MOSFET Transistors

(I_DD≅0 @ V_DD=12.5V, V_GG=0V)

RF Ground (Case)

PACKAGE CODE: H46S

• P_out>8W @ V_DD=12.5V, V_GG=3.5V, P_in=20mW

• η_T>40% @ P_out=8W (V_GGcontrol), V_DD=12.5V, P_in=20mW

• Broadband Frequency Range: 135-175MHz

• Low-Power Control Current I_GG=1mA (typ) at V_GG=3.5V

• Module Size: 30 x 10 x 5.4 mm

• Linear operation is possible by setting the quiescent drain

current with the gate voltage and controlling the output power

with the input power

RoHS COMPLIANCE

• RA08H1317M-101 is a RoHS compliant products.

• RoHS compliance is indicate by the letter “G” after the Lot Marking.

• This product include the lead in the Glass of electronic parts and the

lead in electronic Ceramic parts.

How ever ,it applicable to the following exceptions of RoHS Directions.

1.Lead in the Glass of a cathode-ray tube, electronic parts, and

fluorescent tubes.

2.Lead in electronic Ceramic parts.

ORDERING INFORMATION:

ORDER NUMBER

RA08H1317M-101

SUPPLY FORM

Antistatic tray,

25 modules/tray

RA08H1317M

24 Jan 2006

MITSUBISHI ELECTRIC

1/8

12 3 4 5 6 7 8

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