<Silicon RF Power Modules >
RA08N1317M
RoHS Compliance ,135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO
DESCRIPTION
BLOCK DIAGRAM
The RA08N1317M is a 8-watt RF MOSFET Amplifier Module for
9.6-volt portable radios that operate in the 135- to 175-MHz range.
The battery can be connected directly to the drain of the
2
3
enhancement-mode MOSFET transistors. Without the gate voltage
(VGG=0V), only a small leakage current flows into the drain and the
RF input signal attenuates up to 60 dB. The output power and drain
current increase as the gate voltage increases. With a gate
voltage around 2.5V (minimum), output power and drain current
increases substantially. The nominal output power becomes
available at 3V (typical) and 3.5V (maximum).
1
4
5
This module is designed for non-linear FM modulation, but may also be
used for linear modulation by setting the drain quiescent current with
the gate voltage and controlling the output power with the input power.
1
2
3
4
5
RF Input (Pin)
Gate Voltage (VGG), Power Control
Drain Voltage (VDD), Battery
FEATURES
• Enhancement-Mode MOSFET Transistors
RF Output (Pout
)
RF Ground (FIN)
(IDD
• Pout>8W @ VDD=9.6V, VGG=3.5V, Pin=20mW
T>50% @ Pout=8W (VGG control), VDD=9.6V, Pin=20mW
0
@ VDD=9.6V, VGG=0V)
•
• Broadband Frequency Range: 135-175MHz
• Module Size: 30 x 10 x 5.4 mm
• Linear operation is possible by setting the quiescent drain current with
the gate voltage and controlling the output power with the input power
PACKAGE CODE: H46S
RoHS COMPLIANCE
• RA08N1317M is a RoHS compliant products.
• This product include the lead in the Glass of electronic parts and
the lead in electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
RA08N1317M-502
SUPPLY FORM
Antistatic tray,
50 modules/tray
Publication Date : Dec. 2018
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