MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA08N1317M
135-175MHz 8W 9.6V PORTABLE RADIO
DESCRIPTION
BLOCK DIAGRAM
The RA08N1317M is a 8-watt RF MOSFET Amplifier Module
for 9.6-volt portable radios that operate in the 135- to 175-MHz
range.
2
3
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the drain
and the RF input signal attenuates up to 60 dB. The output power
and drain current increase as the gate voltage increases. With a
gate voltage around 2.5V (minimum), output power and drain
current increases substantially. The nominal output power
becomes available at 3V (typical) and 3.5V (maximum). At
VGG=3.5V, the typical gate current is 1 mA.
1
4
5
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
1
RF Input (Pin)
2
3
4
5
Gate Voltage (VGG), Power Control
Drain Voltage (VDD), Battery
RF Output (Pout)
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD@0 @ VDD=9.6V, VGG=0V)
RF Ground (Case)
• Pout>8W @ VDD=9.6V, VGG=3.5V, Pin=20mW
• hT>50% @ Pout=8W (VGG control), VDD=9.6V, Pin=20mW
• Broadband Frequency Range: 135-175MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=3.5V
• Module Size: 30 x 10 x 5.4 mm
• Linear operation is possible by setting the quiescent drain current
with the gate voltage and controlling the output power with the
input power
ORDERING INFORMATION:
ORDER NUMBER
RA08N1317M-E01
SUPPLY FORM
Antistatic tray,
25 modules/tray
RA08N1317M-01
(Japan - packed without desiccator)
RA 08N1317M
23 Dec 2002
MITSUBISHI ELECTRIC
1/9