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RA08N1317M-01 PDF预览

RA08N1317M-01

更新时间: 2024-01-11 05:30:09
品牌 Logo 应用领域
三菱 - MITSUBISHI /
页数 文件大小 规格书
9页 65K
描述
135-175MHz 8W 9.6V PORTABLE RADIO

RA08N1317M-01 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.84特性阻抗:50 Ω
构造:COMPONENT最大输入功率 (CW):14.77 dBm
最大工作频率:175 MHz最小工作频率:135 MHz
最高工作温度:90 °C最低工作温度:-30 °C
射频/微波设备类型:NARROW BAND HIGH POWER最大电压驻波比:4
Base Number Matches:1

RA08N1317M-01 数据手册

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MITSUBISHI RF MOSFET MODULE  
RA08N1317M  
135-175MHz 8W 9.6V PORTABLE RADIO  
DESCRIPTION  
BLOCK DIAGRAM  
The RA08N1317M is a 8-watt RF MOSFET Amplifier Module  
for 9.6-volt portable radios that operate in the 135- to 175-MHz  
range.  
2
3
The battery can be connected directly to the drain of the  
enhancement-mode MOSFET transistors. Without the gate  
voltage (VGG=0V), only a small leakage current flows into the drain  
and the RF input signal attenuates up to 60 dB. The output power  
and drain current increase as the gate voltage increases. With a  
gate voltage around 2.5V (minimum), output power and drain  
current increases substantially. The nominal output power  
becomes available at 3V (typical) and 3.5V (maximum). At  
VGG=3.5V, the typical gate current is 1 mA.  
1
4
5
This module is designed for non-linear FM modulation, but may  
also be used for linear modulation by setting the drain quiescent  
current with the gate voltage and controlling the output power with  
the input power.  
1
RF Input (Pin)  
2
3
4
5
Gate Voltage (VGG), Power Control  
Drain Voltage (VDD), Battery  
RF Output (Pout)  
FEATURES  
• Enhancement-Mode MOSFET Transistors  
(IDD@0 @ VDD=9.6V, VGG=0V)  
RF Ground (Case)  
• Pout>8W @ VDD=9.6V, VGG=3.5V, Pin=20mW  
hT>50% @ Pout=8W (VGG control), VDD=9.6V, Pin=20mW  
• Broadband Frequency Range: 135-175MHz  
• Low-Power Control Current IGG=1mA (typ) at VGG=3.5V  
• Module Size: 30 x 10 x 5.4 mm  
• Linear operation is possible by setting the quiescent drain current  
with the gate voltage and controlling the output power with the  
input power  
ORDERING INFORMATION:  
ORDER NUMBER  
RA08N1317M-E01  
SUPPLY FORM  
Antistatic tray,  
25 modules/tray  
RA08N1317M-01  
(Japan - packed without desiccator)  
RA 08N1317M  
23 Dec 2002  
MITSUBISHI ELECTRIC  
1/9  

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