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R3788 PDF预览

R3788

更新时间: 2024-09-14 22:24:47
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HAMAMATSU /
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4页 77K
描述
PHOTOMULTlPLlER TUBES

R3788 数据手册

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PHOTOMULTlPLlER TUBES  
R3788, R4332  
High Sensitivity, Bialkali Photocathode  
28mm (1-1/8 Inch) Diameter, 9-Stage, Side-On Type  
FEATURES  
Spectral Response  
R3788 .................................................... 185 to 750 nm  
R4332 ..................................................... 160 to 750 nm  
High Cathode Sensitivity  
Luminous ........................................... 120 A/lm Typ.  
Radiant at 420nm .................................. 90mA/W Typ.  
Quantum Efficiency at 210nm ......... 40% Typ. (R4332)  
High Anode Sensitivity (at 1000V)  
Luminous ............................................... 1200A/lm Typ.  
Radiant at 420nm ............................ 9.0 105 A/W Typ.  
APPLICATIONS  
Fluorescence Spectrophotometers  
Emission Spectrophotometers  
Atomic Absorption Spectrophotometers  
GENERAL  
Figure 1: Typical Spectral Response  
Parameter  
Description  
Unit  
TPMSB0081EA  
Spectral Response  
100  
CATHODE RADIANT  
SENSITIVITY  
R3788  
R4332  
185 to 750  
160 to 750  
nm  
nm  
R4332  
Wavelength of Maximum Response  
420  
nm  
QUANTUM  
EFFICIENCY  
Photocathode  
MateriaI  
10  
Bialkali  
Minimum Effective Area  
8
24  
mm  
Window Material  
R3788  
R3788  
UV glass  
1
R4332  
Fused silica  
Dynode  
Bialkali  
Circular-cage  
9
Secondary Emitting Surface  
Structure  
Number of Stages  
0.1  
0.01  
Direct Interelectrode Capacitances  
Anode to Last Dynode  
Anode to All Other Electrodes  
4
6
pF  
pF  
11-pin base  
JEDEC No. B11-88  
Base  
100  
200  
300  
400  
500  
600  
700  
800  
Weight  
45  
g
WAVELENGTH (nm)  
E678–11A (option)  
E717–21(option)  
SuitabIe Socket  
SuitabIe Socket Assembly  
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.  
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are  
subject to change without notice. No patent rights are granted to any of the circuits described herein. © 1994 Hamamatsu Photonics K.K.  

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