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High Sensitivity, Bialkali Photocathode
28 mm (1-1/8 Inch) Diameter, 9-Stage, Side-On Type
FEATURES
GWide Spectral Response
R3788 ................................................... 185 nm to 750 nm
R4332 ................................................... 160 nm to 750 nm
GHigh Cathode Sensitivity
Luminous ................................................. 120 µA/lm Typ.
Radiant at 420 nm ...................................... 90 mA/W Typ.
Quantum Efficiency at 210 nm ...........40 % Typ. (R4332)
GHigh Anode Sensitivity (at 1000 V)
Luminous .................................................. 1200 A/lm Typ.
Radiant at 420 nm ............................... 9.0 × 105 A/W Typ.
APPLICATIONS
GFluorescence Spectrophotometers
GEmission Spectrophotometers
GAtomic Absorption Spectrophotometers
Figure 1: Typical Spectral Response
SPECIFICATIONS
TPMSB0081EA
100
GENERAL
CATHODE RADIANT
SENSITIVITY
Parameter
R3788
Description/Value
Unit
nm
nm
nm
—
mm
—
—
R4332
Spectral
185 to 750
160 to 750
420
Bialkali
8 × 24
UV glass
Fused silica
Bialkali
Response
R4332
QUANTUM
EFFICIENCY
Wavelength of Maximum Response
10
MateriaI
Minimum Effective Area
Photocathode
Window
Material
R3788
R4332
R3788
1
Secondary Emitting Surface
Structure
—
—
Dynode
Circular-cage
Number of Stages
9
—
Direct Interelectrode Anode to Last Dynode
4
6
pF
pF
—
Capacitances
Base
Anode to All Other Electrodes
0.1
0.01
11-pin base JEDEC No. B11-88
Approx. 45
Weight
g
Operating Ambient Temperature
Storage Temperature
SuitabIe Socket
-30 to +50
-30 to +50
E678–11A (Sold Separately)
E717–63 (Sold Separately)
E717–74 (Sold Separately)
°C
°C
—
100
200
300
400
500
600
700
800
SuitabIe Socket Assembly
—
WAVELENGTH (nm)
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K.