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R1WV3216RSD-8S PDF预览

R1WV3216RSD-8S

更新时间: 2024-11-16 03:38:51
品牌 Logo 应用领域
瑞萨 - RENESAS 静态存储器
页数 文件大小 规格书
16页 122K
描述
32Mb superSRAM (2M wordx16bit)

R1WV3216RSD-8S 数据手册

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R1WV3216R Series  
REJ03C0215-0100Z  
Rev.1.00  
32Mb superSRAM (2M wordx16bit)  
2004.4.13  
Description  
The R1WV3216R Series is a family of low voltage 32-Mbit static RAMs organized as 2097152-words by 16-bit,  
fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.  
The R1WV3216R Series is suitable for memory applications where a simple interfacing , battery operating and  
battery backup are the important design objectives.  
The R1WV3216R Series is made by stacked-micro-package technology and two chips of 16Mbit superSRAMs  
are assembled in one package.  
The R1WV3216R Series is packaged in a 52pin micro thin small outline mount device[µTSOP / 10.79mm x  
10.49mm with the pin-pitch of 0.4mm] or a 48balls fine pitch ball grid array [f-BGA / 7.5mmx8.5mm with the ball-pitch  
of 0.75mm and 6x8 array] . It gives the best solution for a compaction of mounting area as well as flexibility of wiring  
pattern of printed circuit boards.  
Features  
• Single 2.7-3.6V power supply  
• Small stand-by current:4µA (3.0V, typ.)  
• Data retention supply voltage =2.0V  
• No clocks, No refresh  
• All inputs and outputs are TTL compatible.  
• Easy memory expansion by CS1#, CS2, LB# and UB#  
• Common Data I/O  
• Three-state outputs: OR-tie capability  
• OE# prevents data contention on the I/O bus  
• Process technology: 0.15um CMOS  
Rev.1.00 2004.4.13  
page 1 of 16  

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