Datasheet > R1WV6416R

R1WV6416R

更新时间： 2024-11-16 06:06:23

品牌	Logo	应用领域
瑞萨 - RENESAS		静态存储器
页数	文件大小	规格书
18页	197K
描述
64Mb Advanced LPSRAM (4M word x 16bit / 8M word x 8bit)

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中文翻译

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数据手册

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R1WV6416R 数据手册

Preliminary

R1WV6416R Series

64Mb Advanced LPSRAM (4M word x 16bit / 8M word x 8bit)

REJ03C0368-0001

Preliminary

Rev.0.01

2008.03.24

Description

The R1WV6416R Series is a family of low voltage 64-Mbit static RAMs organized as 4,194,304-word by

16-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies.

The R1WV6416R Series is suitable for memory applications where a simple interfacing, battery operating

and battery backup are the important design objectives.

The R1WV6416R Series is provided in 48-pin thin small outline package [TSOP (I): 12mm x 20mm with

pin pitch of 0.5mm], 52-pin micro thin small outline package [µTSOP (II): 10.79mm x 10.49mm with pin pitch

of 0.4mm] and 48-ball fine pitch ball grid array [f-BGA] package. It gives the best solution for compaction of

mounting area as well as flexibility of wiring pattern of printed circuit boards.

Features

•

Single 2.7~3.6V power supply

Small stand-by current: 8 µA (3.0V, typical)

No clocks, No refresh

All inputs and outputs are TTL compatible.

Easy memory expansion by CS1#, CS2, LB# and UB#

Common Data I/O

Three-state outputs: OR-tie Capability

OE# prevents data contention on the I/O bus

Ordering Information

Type No.

Access time

55 ns^*1

70 ns

Package

R1WV6416RSA-5S%

R1WV6416RSA-7S%

R1WV6416RSD-5S%

R1WV6416RSD-7S%

R1WV6416RBG-5S%

R1WV6416RBG-7S%

12mm x 20mm 48-pin plastic TSOP (I)

(normal-bend type) (48P3R)

350 mil 52-pin plastic μ-TSOP (II)

(normal-bend type) (52PTG)

55 ns^*1

70 ns

55 ns^*1

70 ns

f-BGA 0.75mm pitch 48-ball

Note1. 55ns parts can be supported under the condition of the input timing limitation toward SRAM on customer’s

system. Please contact our sales office in your region, in case of the inquiry for 55ns parts.

% - Temperature version; see table below

Temperature Range

0 ~ +70 °C

-40 ~ +85 °C

REJ03C0368-0001, Rev.0.01, 2008.03.24

Page 1 of 16

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与R1WV6416R相关器件

型号	品牌	获取价格	描述	数据表
R1WV6416RBG-5SI	RENESAS	获取价格	64Mb Advanced LPSRAM (4M word x 16bit / 8M word x 8bit)
R1WV6416RBG-5SR	RENESAS	获取价格	64Mb Advanced LPSRAM (4M word x 16bit / 8M word x 8bit)
R1WV6416RBG-7SI	RENESAS	获取价格	64Mb Advanced LPSRAM (4M word x 16bit / 8M word x 8bit)
R1WV6416RBG-7SR	RENESAS	获取价格	64Mb Advanced LPSRAM (4M word x 16bit / 8M word x 8bit)
R1WV6416RSA-5SI	RENESAS	获取价格	64Mb Advanced LPSRAM (4M word x 16bit / 8M word x 8bit)
R1WV6416RSA-5SR	RENESAS	获取价格	64Mb Advanced LPSRAM (4M word x 16bit / 8M word x 8bit)
R1WV6416RSA-7SI	RENESAS	获取价格	64Mb Advanced LPSRAM (4M word x 16bit / 8M word x 8bit)
R1WV6416RSA-7SR	RENESAS	获取价格	64Mb Advanced LPSRAM (4M word x 16bit / 8M word x 8bit)
R1WV6416RSD-5SI	RENESAS	获取价格	64Mb Advanced LPSRAM (4M word x 16bit / 8M word x 8bit)
R1WV6416RSD-5SR	RENESAS	获取价格	64Mb Advanced LPSRAM (4M word x 16bit / 8M word x 8bit)