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R1767 PDF预览

R1767

更新时间: 2024-09-15 22:24:51
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HAMAMATSU /
页数 文件大小 规格书
2页 25K
描述
PHOTOMULTlPLlER TUBE

R1767 数据手册

 浏览型号R1767的Datasheet PDF文件第2页 
PHOTOMULTlPLlER TUBE  
R1767  
S-1 Spectral Response, High Infrared Sensitivity (QE0.08% at 1.06 µm)  
38mm(1-1/2 Inch) Diameter, 10-Stage, Head-On Type  
GENERAL  
Parameter  
Description/Value  
Unit  
nm  
Spectral Response  
400 to 1200  
Wavelength of Maximum Response  
800  
nm  
MateriaI  
Minimum Effective Area  
Ag–O–Cs  
Photocathode  
34  
mm dia.  
Window Material  
Dynode  
Borosilicate glass  
Circular–cage  
10  
Structure  
Number of Stages  
12–pin base JEDEC No. B12–43  
E678–12A (supplied)  
Base  
SuitabIe Socket  
MAXIMUM RATINGS (Absolute Maximum Values)  
Parameter  
Between Anode and Cathode  
Between Anode and Last Dynode  
Value  
1500  
250  
0.01  
-30 to +50  
Unit  
Vdc  
Vdc  
mA  
°C  
Supply Voltage  
Avarage Anode Current  
Ambient Temperature  
CHARACTERISTlCS (at 25 )  
Parameter  
Luminous (2856K)  
Min.  
10  
Typ.  
25  
Max.  
Unit  
A/lm  
Radiant at 800nm  
2.4  
mA/W  
Cathode Sensitivity  
Red/White Ratio  
(Toshiba IR–D80A filter)  
0.14  
0.08  
5
480  
Quantum Efficiency at 1.06 m  
Luminous (2856K)  
%
A/lm  
A/W  
1
Anode Sensitivity  
Gain  
Radiant at 800nm  
2
105  
Anode Dark Current (at 4 A/lm)  
Anode Pulse Rise Time  
Electron Transit Time  
7000  
2.2  
37  
20000  
nA  
ns  
ns  
Time Response  
NOTE: Anode characteristics are measured with the voItage distribution ratio shown below.  
VOLTAGE DlSTRlBUTlON RATlO AND SUPPLY VOLTAGE  
K
Dy1  
Dy2  
Dy3  
Dy4  
Dy5  
Dy6  
Dy7  
Dy8  
Dy9  
Dy10  
P
Electrodes  
Ratio  
2
1
1
1
1
1
1
1
1
1
1
SuppIy Voltage : 1250Vdc,  
K : Cathode, Dy : Dynode, P : Anode  
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.  
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are  
subject to change without notice. No patent rights are granted to any of the circuits described herein.  
1999 Hamamatsu Photonics K.K.  
©

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