Datasheet > Q68000-A8322

Q68000-A8322

更新时间： 2022-12-09 06:22:49

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
6页	180K
描述
NPN Silicon Transistors

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数据手册

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Q68000-A8322 数据手册

NPN Silicon Transistors

SMBT 6428

SMBT 6429

● For AF input stages and driver applications

● High current gain

● Low collector-emitter saturation voltage

Package¹⁾

Type

Marking

Ordering Code

(tape and reel)

Pin Configuration

SMBT 6428

SMBT 6429

s1K

s1L

Q68000-A8321

Q68000-A8322

SOT-23

Maximum Ratings

Parameter

Symbol

Values

Unit

SMBT 6428

SMBT 6429

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

VCE0

VCB0

VEB0

Collector current

200

330

150

˚C

Total power dissipation, T^S= 71 ˚C

Junction temperature

tot

Storage temperature range

Tstg

– 65 … + 150

Thermal Resistance

Junction - ambient²⁾

th JA

th JS

≤ 310

≤ 240

K/W

Junction - soldering point

For detailed information see chapter Package Outlines.

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm²Cu.

5.91

Semiconductor Group

12 3 4 5 6

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