Datasheet > Q68000-A8370

Q68000-A8370

更新时间： 2024-09-22 22:44:11

品牌	Logo	应用领域
英飞凌 - INFINEON		微波
页数	文件大小	规格书
5页	38K
描述
GaAs MMIC (Single-stage monolithic microwave IC MMICamplifier Cascadable 50 ヘ gain block)

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Q68000-A8370 数据手册

GaAs MMIC

CGY 50

________________________________________________________________________________________________________

D a t a s h e e t

* Single-stage monolithic microwave IC ( MMIC-

amplifier )

* Cascadable 50 Ω gain block

* Application range: 100 MHz to 3 GHz

* IP3 30 dBm typ. @ 1.8 GHz

* Gain 8.5 dB typ. @ 1.8 GHz

* Low noise figure: 3.0 dB typ @ 1.8 GHz

* Gain control dynamic range 20 dB

ESD: Electrostatic discharge sensitive device,

observe handling precautions!

Type

Marking

Ordering code

(tape and reel)

Circuit diagram

Pin Configuration

Package 1)

OUT/D

CGY 50

Q68000-A8370

SOT-143

IN/G

typ. 4k

Ω

1, 3

Maximum ratings

Drain-voltage

Symbol

Value

5.5

Unit

Peak drain-voltage

7.5

Current control gate voltage

-3 ... 0

Drain-gate voltage

Input power ²⁾

7.5

dBm

°C

stg

Channel temperature

Storage temperature range

Total power dissipation (TS < 82°C)

150

-40...+150

400

°C

tot

Thermal resistance

<170

K/W

Channel-soldering point

thChS

Note: exceeding any of the max. ratings may cause permanent damage to the device. Appropriate handling is

required to protect the electrostatic sensitive MMIC against degradation due to excess current spikes. Proper

ground connection of leads 1 and 3 ( with minimum inductance ) is required to achieve the guaranteed RF

performance, stable operating conditions and adequate tuning.

1) Dimensions see chapter Package Outlines

2) See application circuit.

3) T_Sis measured on the source 1 lead at the soldering point to the PCB.

Siemens Aktiengesellschaft

pg. 1/5

11.01.1996

HL EH PD 21

12 3 4 5

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