Datasheet > Q68000-A8330

Q68000-A8330

更新时间： 2024-09-22 22:44:11

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体开关晶体管
页数	文件大小	规格书
6页	158K
描述
NPN Silicon Switching Transistor

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中文翻译

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数据手册

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Q68000-A8330 数据手册

NPN Silicon Switching Transistor

SXT 2222 A

● High current gain: 0.1 mA to 500 mA

● Low collector-emitter saturation voltage

Package¹⁾

Type

Marking

Ordering Code

(tape and reel)

Pin Configuration

SXT 2222 A

Q68000-A8330

SOT-89

Maximum Ratings

Parameter

Symbol

Values

Unit

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

CE0

CB0

EB0

600

tot

Total power dissipation, T

= 120 ˚C

Junction temperature

150

˚C

Storage temperature range

Tstg

– 65 … + 150

Thermal Resistance

Junction - ambient²⁾

th JA

th JS

≤ 90

≤ 30

K/W

Junction - soldering point

For detailed information see chapter Package Outlines.

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm²Cu.

5.91

Semiconductor Group

12 3 4 5 6

中文翻译

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