Datasheet > Q67060-S6201-A4

Q67060-S6201-A4

更新时间： 2024-01-10 10:32:59

品牌	Logo	应用领域
英飞凌 - INFINEON		开关电源开关
页数	文件大小	规格书
14页	187K
描述
Smart Highside Power Switch

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中文翻译

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数据手册

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Q67060-S6201-A4 数据手册

PROFET BTS 432 D2

Smart Highside Power Switch

Features

Product Summary

)

Load dump and reverse battery protection

Clamp of negative voltage at output

Short-circuit protection

Current limitation

Thermal shutdown

Diagnostic feedback

Open load detection in ON-state

CMOS compatible input

Electrostatic discharge (ESD) protection

Loss of ground and loss of V protection

Load dump

V -V_OUTAvalanche Clamp

4.5 ... 42

-32

bb (operation)

bb (reverse)

L(SCp)

L(SCr)

L(ISO)

Overvoltage protection

Undervoltage and overvoltage shutdown with auto-

restart and hysteresis

Straight leads

SMD

Standard

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic

feedback, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection

functions.

+ V

Voltag

source

Gate

Overvoltag

protectio

Curren

limit

protectio

V _Logic

OUT

Charge

Level

Limit for

unclampe

ind.

Voltag

sensor

Temperatur

sensor

Rectifie

Open

Load

Logic

ESD

detectio

Short

detectio

PROF

GND

Load GND

Signal GND

No external components required, reverse load current limited by connected load.

Additional external diode required for charged inductive loads

Infineon Technologies AG

Page 1 of 14

1999-03-22

12 3 4 5 6 7...14

中文翻译

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