Datasheet > Q67060-S6307-A5

Q67060-S6307-A5

更新时间： 2024-09-29 22:53:55

品牌	Logo	应用领域
英飞凌 - INFINEON		开关电源开关
页数	文件大小	规格书
15页	240K
描述
Smart Sense High-Side Power Switch

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中文翻译

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数据手册

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Q67060-S6307-A5 数据手册

PROFET BTS 640 S2

Smart Sense High-Side

Power Switch

Features

Product Summary

V_bb(on)

R_ON

I_L(ISO)

I_L(SCr)

5.0 ... 34

mΩ

Operating voltage

On-state resistance

Load current (ISO)

Current limitation

•

Short circuit protection

12.6

Current limitation

Proportional load current sense

CMOS compatible input

Open drain diagnostic output

Fast demagnetization of inductive loads

Undervoltage and overvoltage shutdown with

auto-restart and hysteresis

Overload protection

Package

TO220-7-11

TO263-7-2

TO220-7-12

•

Thermal shutdown

Standard (staggered)

SMD

Straight

Overvoltage protection including load dump (with

external GND-resistor)

•

Reverse battery protection (with external GND-resistor)

Loss of ground and loss of V protection

Electrostatic discharge (ESD) protection

Application

•

µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads

All types of resistive, inductive and capacitve loads

Replaces electromechanical relays, fuses and discrete circuits

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic

feedback, proportional sense of load current, monolithically integrated in Smart SIPMOS technology.

Providing embedded protective functions.

Block Diagram

+ V

Voltage

source

Gate

protection

Overvoltage

protection

Current

limit

Logic

6, 7

OUT

Limit for

Charge pump

Level shifter

Voltage

sensor

unclamped

ind. loads

Current

Sense

Rectifier

Output

Voltage

detection

Load

Logic

ESD

Temperature

sensor

GND

PROFET

GND

Load GND

Signal GND

Semiconductor Group

Page 1 of 15

2003-Oct-01

12 3 4 5 6 7...15

中文翻译

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