Datasheet > Q67060-S6502-A3

Q67060-S6502-A3

更新时间： 2024-02-10 18:09:11

品牌	Logo	应用领域
英飞凌 - INFINEON		开关电源开关
页数	文件大小	规格书
10页	141K
描述
Smart Lowside Power Switch

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中文翻译

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数据手册

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Q67060-S6502-A3 数据手册

HITFET BTS 141

Smart Lowside Power Switch

Features

Product Summary

Drain source voltage

On-state resistance

Current limit

• Logic Level Input

• Input Protection (ESD)

• Thermal Shutdown

• Overload protection

• Short circuit protection

mΩ

DS(on)

D(lim)

Nominal load current

Clamping energy

D(ISO)

4000 mJ

• Overvoltage protection

• Current limitation

• Status feedback with external input resistor

• Analog driving possible

Application

• All kinds of resistive, inductive and capacitive loads in switching or

linear applications

• µC compatible power switch for 12 V and 24 V DC applications

• Replaces electromechanical relays and discrete circuits

General Description

N channel vertical power FET in Smart SIPMOS chip on chip tech-

nology. Fully protected by embedded protected functions.

LOAD

Drain

Overvoltage

protection

Current

dv/dt

limitation

lim itation

Over-

temperature

protection

Overload

protection

Short circuit

ESD

protection

Source

HITFET

Page 1

13.07.1998

Semiconductor Group

12 3 4 5 6 7...10

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