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Q67060-S7405 PDF预览

Q67060-S7405

更新时间: 2024-02-27 12:00:38
品牌 Logo 应用领域
英飞凌 - INFINEON 外围驱动器驱动程序和接口开关接口集成电路
页数 文件大小 规格书
17页 331K
描述
Smart Power High-Side-Switch

Q67060-S7405 技术参数

生命周期:Obsolete包装说明:TO-252,
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.61
Is Samacsys:N内置保护:TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL; UNDER VOLTAGE
接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVERJESD-30 代码:R-PSSO-G4
长度:6.5 mm功能数量:1
端子数量:4输出电流流向:SINK
标称输出峰值电流:2.2 A封装主体材料:PLASTIC/EPOXY
封装代码:TO-252封装形状:RECTANGULAR
封装形式:SMALL OUTLINE座面最大高度:2.5 mm
最大供电电压:52 V最小供电电压:6 V
标称供电电压:13.5 V表面贴装:YES
技术:MOS端子形式:GULL WING
端子节距:1.14 mm端子位置:SINGLE
断开时间:200 µs接通时间:180 µs
宽度:6.22 mmBase Number Matches:1

Q67060-S7405 数据手册

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BTS 452 R  
Smart Power High-Side-Switch  
Features  
Product Summary  
Overload protection  
Current limitation  
Overvoltage protection  
Operating voltage  
V
V
62  
6...52 V  
V
bb(AZ)  
bb(on)  
Short circuit protection  
Thermal shutdown with restart  
Overvoltage protection  
(including load dump)  
On-state resistance  
Nominal load current  
R
200 mΩ  
ON  
I
1.8  
A
L(ISO)  
Fast demagnetization of inductive loads  
Reverse battery protection  
with external resistor  
Open drain diagnostic output for overtemperature  
and short circuit  
P-TO252-5-11  
Open load detection in OFF - State  
with external resistor  
CMOS compatible input  
Loss of GND and loss of V protection  
bb  
ESD - Protection  
Very low standby current  
Application  
All types of resistive, inductive and capacitive loads  
µC compatible power switch for 12 V, 24 V and 42 V DC applications  
Replaces electromechanical relays and discrete circuits  
General Description  
N channel vertical power FET with charge pump, ground referenced CMOS compatible input  
and diagnostic feedback, monolithically integrated in Smart SIPMOS technology.  
Providing embedded protective functions.  
2004-01-27  
Page 1  

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