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Q67060-S6700-A3 PDF预览

Q67060-S6700-A3

更新时间: 2024-01-26 10:49:16
品牌 Logo 应用领域
英飞凌 - INFINEON 开关电源开关
页数 文件大小 规格书
11页 195K
描述
Smart Lowside Power Switch

Q67060-S6700-A3 数据手册

 浏览型号Q67060-S6700-A3的Datasheet PDF文件第2页浏览型号Q67060-S6700-A3的Datasheet PDF文件第3页浏览型号Q67060-S6700-A3的Datasheet PDF文件第4页浏览型号Q67060-S6700-A3的Datasheet PDF文件第5页浏览型号Q67060-S6700-A3的Datasheet PDF文件第6页浏览型号Q67060-S6700-A3的Datasheet PDF文件第7页 
HITFET BTS 917  
Smart Lowside Power Switch  
Features  
Product Summary  
Drain source voltage  
On-state resistance  
Current limit  
Logic Level Input  
60  
100  
1.5  
3.5  
V
V
DS  
Input Protection (ESD)  
Thermal Shutdown  
Overload protection  
Short circuit protection  
Overvoltage protection  
Current limitation  
R
mΩ  
A
DS(on)  
I
D(lim)  
Nominal load current  
Clamping energy  
A
I
D(ISO)  
1000 mJ  
E
AS  
Maximum current adjustable with external resistor  
Current sense  
Status feedback with external input resistor  
Analog driving possible  
Application  
All kinds of resistive, inductive and capacitive loads in switching or  
linear applications  
µC compatible power switch for 12 V and 24 V DC applications  
Replaces electromechanical relays and discrete circuits  
General Description  
N channel vertical power FET in Smart SIPMOS chip on chip tech-  
nology. Fully protected by embedded protected functions.  
V
bb  
+
LOAD  
M
2
NC  
Drain  
3
Overvoltage  
protection  
Current  
dv/dt  
1
4
limitation  
limitation  
IN  
CC  
Over-  
temperature  
protection  
Overload  
protection  
Short circuit  
ESD  
protection  
R
CC  
5
Source  
HITFET  
Page 1  
14.07.1998  
Semiconductor Group  

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