Datasheet > Q67060-S6504-A5

Q67060-S6504-A5

更新时间： 2024-01-25 17:20:34

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	356K
描述
HITFET II.Generation BTS 134 D

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中文翻译

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数据手册

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Q67060-S6504-A5 数据手册

ꢀ

HITFET ^ꢁII.Generation BTS 134 D

Smart Lowside Power Switch

Features

Product Summary

Drain source voltage

On-state resistance

Nominal load current

Clamping energy

S Logic Level Input

S Input Protection (ESD)

S Thermal shutdown with

auto restart

3.5

mꢀ

DS(on)

D(Nom)

S Overload protection

S Short circuit protection

S Overvoltage protection

S Current limitation

S Analog driving possible

P-TO252-3-11

Application

S All kinds of resistive, inductive and capacitive loads in switching

or linear applications

S µC compatible power switch for 12 V DC applications

S Replaces electromechanical relays and discrete circuits

General Description

ꢁ

N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded

protection functions.

Vbb

Drain

ꢀ

HITFET

Pin 2 and 4 (TAB)

Current

Overvoltage-

Protection

Limitation

Gate-Driving

Unit

Pin 1

Over-

Overload

Short circuit

Protection

temperature

Protection

ESD

Protection

Pin 3

Source

Complete product spectrum and additional information http://www.infineon.com/hitfet

Page 1

2004-03-05

12 3 4 5 6 7...10

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