Datasheet > Q67060-S6501-A2

Q67060-S6501-A2

更新时间： 2024-09-29 23:30:31

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
9页	200K
描述
TRANSISTOR HITFET

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中文翻译

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数据手册

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Q67060-S6501-A2 数据手册

=

HITFET BTS 133

Smart Lowside Power Switch

Features

• Logic Level Input

Product Summary

Drain source voltage

On-state resistance

Current limit

Nominal load current

Clamping energy

mΩ

• Input Protection (ESD)

•=Thermal shutdown with latch

• Overload protection

• Short circuit protection

• Overvoltage protection

• Current limitation

DS(on)

D(lim)

D(ISO)

2000 mJ

• Status feedback with external input resistor

• Analog driving possible

Application

• All kinds of resistive, inductive and capacitive loads in switching or

linear applications

• µC compatible power switch for 12 V and 24 V DC applications

• Replaces electromechanical relays and discrete circuits

General Description



N channel vertical power FET in Smart SIPMOS chip on chip tech-

nology. Fully protected by embedded protected functions.

LOAD

Drain

Overvoltage

protection

Current

limitation

dv/dt

limitation

Over-

Overload

protection

Short circuit

temperature

ESD

protection

Source

HITFET

Page 1

19.05.2000

12 3 4 5 6 7...9

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