®
PROFET Data Sheet BTS660P
Smart Highside High Current Power Switch
Product Summary
Overvoltage protection
Output clamp
Operating voltage
On-state resistance
Load current (ISO)
Reversave
Reverse battery protection by self turn on of
power MOSFET
•
Vbb(AZ)
VON(CL)
70
V
V
V
62
5.0...58
Features
V
bb(on)
•
•
•
•
•
•
•
•
•
•
•
•
Overload protection
Current limitation
Short circuit protection
Over temperature protection
Over voltage protection (including load dump)
Clamp of negative voltage at output
Fast deenergizing of inductive loads
Low ohmic inverse current operation
Diagnostic feedback with load current sense
Open load detection via current sense
R
ON
9
44
mΩ
A
I
L(ISO)
L(SC)
Short circuit current limitation I
Current sense ratio
90
13 000
A
I : I
L
IS
1
)
TO 220-7SMD
2
Loss of Vbb protection )
Electrostatic discharge (ESD) protection
7
7
Application
Power switch with current sense diagnostic
1
•
1
SMD
Standard
feedback for up to 48V DC grounded loads
•
•
Most suitable for loads with high inrush current
like lamps and motors; all types of resistive and
inductive loads
Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions.
4 & Tab
+ V
bb
R
bb
Voltage
source
Current
limit
Gate
protection
Overvoltage
protection
1,2,6,7
OUT
Limit for
Voltage
sensor
Charge pump
Level shifter
Rectifier
unclamped
ind. loads
IL
Current
Sense
Output
Voltage
detection
3
Load
IN
Logic
ESD
IIN
Temperature
sensor
IIS
PROFET
IS
Load GND
5
VIN
R
VIS
IS
Logic GND
1
2
)
)
With additional external diode.
Additional external diode required for energized inductive loads (see page 9).
Infineon Technologies AG
Page 1
2003-Oct-01