Datasheet > Q67050-T6

Q67050-T6

更新时间： 2024-09-26 22:53:59

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
4页	36K
描述
SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)

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数据手册

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Q67050-T6 数据手册

BSS 159

Preliminary data

SIPMOS Small-Signal Transistor

• N channel

• Depletion mode

• High dynamic resistance

Pin 1

Pin 2

Pin 3

Type

DS(on)

Package

SOT-23

Ordering Code

Q67050-T6

BSS 159

50 V

0.16 A

8 Ω

Maximum Ratings

Parameter

Symbol

Values

Unit

Drain source voltage

Drain-gate voltage

DGR

= 20 kΩ

Gate source voltage

± 14

± 20

Gate-source peak voltage, aperiodic

Continuous drain current

T = 25 °C

0.16

0.48

0.36

DC drain current, pulsed

Dpuls

T = 25 °C

Power dissipation

tot

T = 25 °C

Chip or operating temperature

Storage temperature

-55 ... + 150 °C

-55 ... + 150

stg

Thermal resistance, chip to ambient air

Therminal resistance, chip-substrate - reverse side

DIN humidity category, DIN 40 040

≤ 350

≤ 285

K/W

thJA

thJSR

IEC climatic category, DIN IEC 68-1

55 / 150 / 56

1) For package mounted on aluminium 15 mm x 16.7 mm x 0.7 mm.

Semiconductor Group

May-30-1996

12 3 4

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