Datasheet > Q67060-S6103-A2

Q67060-S6103-A2

更新时间： 2024-01-29 01:05:04

品牌	Logo	应用领域
英飞凌 - INFINEON		开关电源开关
页数	文件大小	规格书
15页	317K
描述
Smart Highside Power Switch

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中文翻译

获取价格

数据手册

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Q67060-S6103-A2 数据手册

PROFET BTS 410 F2

Smart Highside Power Switch

Features

Product Summary

•

Overload protection

Current limitation

Short circuit protection

Thermal shutdown

Overvoltage protection (including load dump)

Fast demagnetization of inductive loads

Reverse battery protection

Undervoltage and overvoltage shutdown with

auto-restart and hysteresis

Overvoltage protection

V_bb(AZ)

4.7 ... 42 V

Operating voltage

On-state resistance

Load current (ISO)

Current limitation

bb(on)

220

1.8

2.7

mΩ

L(ISO)

L(SCr)

)

•

Open drain diagnostic output

Open load detection in ON-state

CMOS compatible input

TO-220AB/5

Loss of ground and loss of V protection

Electrostatic discharge (ESD) protection

Straight leads

Standard

SMD

Application

•

µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads

Most suitable for inductive loads

Replaces electromechanical relays, fuses and discrete circuits

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic

feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.

+ V

Voltage

source

Gate

protection

Overvoltage

protection

Current

limit

V_Logic

OUT

Limit for

Charge pump

Level shifter

Voltage

sensor

unclamped

ind. loads

Temperature

sensor

Rectifier

Open load

detection

Load

Logic

ESD

Short circuit

detection

PROFET

GND

Load GND

Signal GND

)

With external current limit (e.g. resistor R =150 Ω) in GND connection, resistors in series with IN and ST

GND

connections, reverse load current limited by connected load.

Semiconductor Group

1 of 15

2003-Oct-01

12 3 4 5 6 7...15

中文翻译

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