Datasheet > Q67060-S6111-A4

Q67060-S6111-A4

更新时间： 2024-09-28 22:37:19

品牌	Logo	应用领域
英飞凌 - INFINEON		开关电源开关
页数	文件大小	规格书
12页	262K
描述
Smart High-Side Power Switch One Channel: 38mз Status Feedback

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中文翻译

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数据手册

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Q67060-S6111-A4 数据手册

BTS436L2

Smart High-Side Power Switch

One Channel: 38mΩ

Status Feedback

Product Summary

Package

TO 220-5-11

TO-263-5-2 TO-220-5-12

On-state Resistance

Operating Voltage

Nominal load current

Current limitation

R_ON

38mΩ

4.75...41V

9.8A

V_bb(on)

I_L(NOM)

I_L(SCr)

40A

Standard

SMD

Straight

General Description

•

N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and

diagnostic feedback, monolithically integrated in Smart SIPMOS technology.

Providing embedded protective functions

•

Applications

•

µC compatible high-side power switch with diagnostic feedback for 5V, 12V and 24V grounded loads

All types of resistive, inductive and capacitve loads

Most suitable for loads with high inrush currents, so as lamps

Replaces electromechanical relays, fuses and discrete circuits

Basic Functions

•

Very low standby current

CMOS compatible input

Fast demagnetization of inductive loads

Stable behaviour at undervoltage

Wide operating voltage range

Logic ground independent from load ground

Block Diagram

Protection Functions

Vbb

•

Short circuit protection

Overload protection

Current limitation

Thermal shutdown

Overvoltage protection (including load dump) with external

resistor

Logic

with

•

Reverse battery protection with external resistor

Loss of ground and loss of V_bbprotection

Electrostatic discharge protection (ESD)

protection

functions

OUT

Load

Diagnostic Function

PROFET

GND

•

Diagnostic feedback with open drain output

Open load detection in ON-state

Feedback of thermal shutdown in ON-state

Semiconductor Group

Page 1 of 12

2003-Oct-01

12 3 4 5 6 7...12

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