Datasheet > Q67060-S6112-A2

Q67060-S6112-A2

更新时间： 2024-01-14 11:50:24

品牌	Logo	应用领域
英飞凌 - INFINEON		开关电源开关
页数	文件大小	规格书
11页	216K
描述
Smart Highside Power Switch One Channel: 20mз

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中文翻译

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Q67060-S6112-A2 数据手册

BTS 441 T

Smart Highside Power Switch

One Channel: 20mΩ

Product Summary

Package

On-state Resistance

Operating Voltage

Nominal load current

Current limitation

20mΩ

4.75 ... 41V

21A

TO-220-5-11

TO-263-5-2 TO-220-5-12

bb(on)

L(ISO)

L(lim)

65A

Standard

SMD

Straight

General Description

•

N channel vertical power FET with charge pump, ground referenced CMOS compatible input, monolithically

integrated in Smart SIPMOS technology.

Providing embedded protective functions.

•

Application

•

µC compatible power switch for 5V, 12 V and 24 V DC applications

All types of resistive, inductive and capacitve loads

Most suitable for loads with high inrush currents, so as lamps

Replaces electromechanical relays, fuses and discrete circuits

Basic Funktions

•

Very low standby current

Optimized static electromagnetic compatibility (EMC)

µC and CMOS compatible

Fast demagnetization of inductive loads

Stable behaviour at undervoltage

Protection Functions

Vbb

•

Short circuit protection

Current limitation

Overload protection

Thermal shutdown

Overvoltage protection (including load dump) with external

GND-resistor

Logic

with

•

Reverse battery protection with external GND-resistor

Loss of ground and loss of V protection

Electrostatic discharge (ESD) protection

protection

functions

OUT

Load

PROFET

GND

Infineon Technologies AG

1 of 11

2003-Oct-01

12 3 4 5 6 7...11

中文翻译

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