Datasheet > Q67060-S6108-A2

Q67060-S6108-A2

更新时间： 2024-01-04 02:00:40

品牌	Logo	应用领域
英飞凌 - INFINEON		开关电源开关
页数	文件大小	规格书
14页	327K
描述
Smart Highside Power Switch

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中文翻译

获取价格

数据手册

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Q67060-S6108-A2 数据手册

PROFET BTS426L1

Smart Highside Power Switch

Product Summary

Features

•

Overvoltage protection

V_bb(AZ)

Overload protection

•

Current limitation

5.0 ... 34 V

Operating voltage

On-state resistance

Load current (ISO)

Current limitation

bb(on)

Short circuit protection

7.0

mΩ

Thermal shutdown

L(ISO)

L(SCr)

Overvoltage protection (including load dump)

Fast demagnetization of inductive loads

)

Reverse battery protection

Undervoltage and overvoltage shutdown with auto-restart

and hysteresis

TO-220AB/5

•

Open drain diagnostic output

Open load detection in ON-state

CMOS compatible input

Loss of ground and loss of V protection

Straight leads

Standard

SMD

Electrostatic discharge (ESD) protection

Application

•

µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads

All types of resistive, inductive and capacitve loads

Replaces electromechanical relays, fuses and discrete circuits

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically

integrated in Smart SIPMOS technology. Providing embedded protective functions.

+ V

Voltage

source

Gate

protection

Overvoltage

protection

Current

limit

V_Logic

OUT

Limit for

Charge pump

Level shifter

Voltage

sensor

unclamped

ind. loads

Temperature

sensor

Rectifier

Open load

Short to Vbb

detection

Load

Logic

ESD

GND

PROFET

GND

Load GND

Signal GND

With external current limit (e.g. resistor R =150 Ω) in GND connection, resistor in series with ST connection, reverse load

GND

current limited by connected load.

Semiconductor Group

1 of 14

2003-Oct-01

12 3 4 5 6 7...14

中文翻译

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