®
PROFET BTS 410 D2
Smart Highside Power Switch
Features
Product Summary
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Overload protection
Overvoltage protection
Vbb(AZ)
65
V
Current limitation
Short circuit protection
Thermal shutdown
Overvoltage protection (including load dump)
Fast demagnetization of inductive loads
Reverse battery protection
Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
V
4.7 ... 42 V
Operating voltage
On-state resistance
Load current (ISO)
Current limitation
bb(on)
R
ON
220
mΩ
I
I
1.8
5
A
A
L(ISO)
L(SCr)
1
)
TO-220AB/5
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CMOS diagnostic output
Open load detection in ON-state
CMOS compatible input
Loss of ground and loss of V protection
Electrostatic discharge (ESD) protection
5
5
bb
5
1
1
Straight leads
Standard
SMD
Application
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µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
All types of resistive, inductive and capacitve loads
Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection
functions.
+ V
bb
3
Vo lta g e
so urc e
Ga te
Ove rvo lta g e
p ro te c tio n
Curre nt
lim it
p ro te c tio n
V
Logic
OUT
Lim it fo r
unc la m p e d
ind . lo a d s
Cha rg e p um p
Le ve l shifte r
Vo lta g e
se nso r
5
Te m p e ra ture
se nso r
Re c tifie r
IN
2
Op e n lo a d
d e te c tio n
Load
Lo g ic
ESD
4
ST
Sho rt c irc uit
d e te c tio n
PROFET
GND
1
Load GND
Signal GND
1)
With external current limit (e.g. resistor R =150 Ω) in GND connection, resistors in series with IN and ST
GND
connections, reverse load current limited by connected load.
Semiconductor Group
1
03.97