IPB09N03LA
IPI09N03LA, IPP09N03LA
OptiMOS®2 Power-Transistor
Product Summary
Features
V DS
25
8.9
50
V
• Ideal for high-frequency dc/dc converters
• N-channel
R DS(on),max (SMD version)
mΩ
A
I D
• Logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
P-TO263-3-2
P-TO262-3-1
P-TO220-3-1
• Superior thermal resistance
• 175 °C operating temperature
• dv /dt rated
Type
Package
Ordering Code Marking
IPB09N03LA
IPI09N03LA
IPP09N03LA
P-TO263-3-2
P-TO262-3-1
P-TO220-3-1
Q67042-S4151
Q67042-S4152
Q67042-S4153
09N03LA
09N03LA
09N03LA
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
T C=25 °C1)
I D
Continuous drain current
50
46
A
T C=100 °C
T C=25 °C2)
I D,pulse
Pulsed drain current
350
75
E AS
I D=45 A, R GS=25 Ω
Avalanche energy, single pulse
mJ
I D=50 A, V DS=20 V,
di /dt =200 A/µs,
Reverse diode dv /dt
dv /dt
6
kV/µs
T
j,max=175 °C
Gate source voltage3)
V GS
±20
63
V
P tot
T C=25 °C
Power dissipation
W
°C
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... 175
55/175/56
Rev. 1.3
page 1
2003-12-18