Datasheet > Q67042-S4162

Q67042-S4162

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	247K
描述
SIPMOS Power-Transistor

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数据手册

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Q67042-S4162 数据手册

SPI10N10L

SPP10N10L



SIPMOS Power-Transistor

Product Summary

Feature

100

154

10.3

N-Channel

Enhancement mode

Logic Level

DS(on)

PG-TO262-3-1

PG-TO220-3-1

175°C operating temperature

Avalanche rated

dv/dt rated

Type

SPP10N10L

SPI10N10L

Package

PG-TO220-3-1 Q67042-S4163

PG-TO262-3-1 Q67042-S4162

Ordering Code

Marking

10N10L

Maximum Ratings, at T = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

Continuous drain current

T =25°C

10.3

8.1

T =100°C

42.2

Pulsed drain current

D puls

T =25°C

Avalanche energy, single pulse

I =10.3 A , V =25V, R =25

DD GS

Reverse diode dv/dt

dv/dt

kV/µs

I =10.3A, V =80V, di/dt=200A/µs, T

DS jmax

=175°C

Gate source voltage

Power dissipation

±20

tot

T =25°C

°C

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

T , T

-55... +175

55/175/56

stg

Rev. 2.1

Page 1

2005-02-14

12 3 4 5 6 7 8

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