IPDH4N03LA G
IPSH4N03LA G
OptiMOS®2 Power-Transistor
Product Summary
V DS
Features
25
4.2
90
V
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target applications
R
DS(on),max (SMD Version)
mΩ
A
I D
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
Type
IPDH4N03LA G
IPSH4N03LA G
Package
P-TO252-3-11
Q67042-S4250
H4N03LA
P-TO251-3-11
Q67042-S4254
H4N03LA
Ordering Code
Marking
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
T C=25 °C2)
I D
Continuous drain current
90
77
A
T C=100 °C
T C=25 °C3)
I D,pulse
Pulsed drain current
360
150
E AS
I D=90 A, R GS=25 Ω
Avalanche energy, single pulse
mJ
I D=90 A, V DS=20 V,
di /dt =200 A/µs,
Reverse diode dv /dt
dv /dt
6
kV/µs
T
j,max=175 °C
Gate source voltage4)
V GS
±20
94
V
P tot
T C=25 °C
Power dissipation
W
°C
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... 175
55/175/56
Rev. 0.92 - target data sheet
page 1
2004-10-27